MMA1260EGR2 vs MMA1250EGR2 비교

다음의 상세 나란히 비교: MMA1260EGR2 제조: NXP Semiconductors 및 MMA1250EGR2 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MMA1250EGR2 MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 ⚠ 최종 구매

사양 비교

파라미터 MMA1260EGR2 MMA1250EGR2
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 Motion Sensors Motion Sensors
수명 주기 상태 NRND 최종 구매
재고 상태 In Stock In Stock
단가 (USD) $5.20 $2.85
센서 유형 Accelerometer Accelerometer
Sensing Axis Z —
Acceleration Range ±1.55 g —
Sensitivity 1140 mV/g to 1260 mV/g [DATA_NEEDED: sensitivity in mV/g]
Bandwidth 50 Hz (2-pole low-pass filter) 50 Hz (internal 2-pole low-pass filter)
공급 전압 5.0 V (nominal) 5.0 V nominal (per legacy MMA1250 datasheet typical conditions)
출력 유형 Analog voltage (ratiometric) Analog, ratiometric
Output at 0 g 2.5 V (nominal, ratiometric) —
Self-Test Yes (electrostatic force activation) —
패키지 16-pin SOIC (SOG) 16-SOIC (SOP-16), surface mount
실장 유형 Surface Mount Surface Mount
동작 온도 [DATA_NEEDED: operating temperature range] -40 C to +85 C (industrial grade)
공급 전류 [DATA_NEEDED: typical supply current] [DATA_NEEDED: quiescent current in mA]
Zero-g Offset Drift [DATA_NEEDED: zero-g offset over temperature] —
RoHS 상태 Compliant (per distributor listings) [DATA_NEEDED: confirm per NXP product page]
Axis — Z (perpendicular to package top)
Full-Scale Range — ±5 g
Zero-g Output — Approximately Vdd/2 (ratiometric)
Sensor Technology — Micromachined silicon capacitive
Internal Features — Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test

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