MMBF170LT1 vs BSS138LT1G Comparison

Detailed side-by-side comparison of MMBF170LT1 by onsemi and BSS138LT1G by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter MMBF170LT1 BSS138LT1G
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.09 $0.08
Manufacturer onsemi (ON Semiconductor) —
Part Number MMBF170LT1 —
Transistor Type N-Channel MOSFET, Enhancement Mode N-Channel MOSFET
Drain-Source Voltage (VDSS) 60 V —
Drain-Gate Voltage (VDGS) 60 Vdc —
Gate-Source Voltage - Continuous (VGS) ±20 Vdc (per datasheet) —
Gate-Source Voltage - Non-repetitive (VGSM) ±40 Vpk (tp <= 50 ms) —
Continuous Drain Current (ID) 500 mA (Ta) 200 mA (Ta)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Total Device Dissipation (PD) 225 mW (Ta, FR-5 board) —
Operating Temperature Range -55 °C to +150 °C (TJ max per datasheet) —
Package / Case SOT-23-3 (TO-236) —
Mounting Type Surface Mount Surface Mount
Pin Count 3 —
RoHS Status Compliant (per onsemi product page) Compliant (RoHS Compliant and Pb-free per Easybom)
AEC-Q101 Qualified Yes (per datasheet) —
Technology DMOS —
Polarity N-Channel —
Drain-Source Voltage (VDS) — 50 V
Power Dissipation (PD) — 225 mW (Ta)
On-Resistance Max (RDS(on)) — 3.5 ohm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate-Source Voltage Max (VGS) — [DATA_NEEDED: maximum gate-source voltage]
Configuration — Single FET
Channel Mode — Enhancement Mode
Package — SOT-23-3 (TO-236)
Operating Temperature — [DATA_NEEDED: operating temperature range]
Product Family — BSS138LT Series Small Signal MOSFET
Typical Applications — Computers, printers, cordless phones, DC-DC converters

Datasheets & Resources

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