MMBT3904-AQ vs MMBT3904-7-F Comparison

Detailed side-by-side comparison of MMBT3904-AQ by Diotec Semiconductor and MMBT3904-7-F by Diodes Incorporated. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Diotec Semiconductor
MMBT3904-AQ MMBT3904-AQ - 40V NPN BJT, 200mA, SOT-23, AEC-Q101 | Diotec

MMBT3904-AQ - 40V NPN BJT, 200mA, SOT-23, AEC-Q101 | Diotec

MMBT3904-AQ ✓ Active
Diodes Incorporated
MMBT3904-7-F MMBT3904-7-F - 40V NPN Small Signal BJT 200mA SOT-23 | Diodes Inc

MMBT3904-7-F - 40V NPN Small Signal BJT 200mA SOT-23 | Diodes Inc

MMBT3904-7-F ✓ Active

Specification Comparison

Parameter MMBT3904-AQ MMBT3904-7-F
Brand Diotec Semiconductor Diodes Incorporated
Category Transistors Transistors
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.07 $0.04
Transistor Type NPN NPN Bipolar Junction Transistor (BJT)
Package SOT-23-3 (TO-236) —
Mounting Type Surface Mount Surface Mount
Collector-Emitter Voltage (Vceo) 40 V 40 V
Collector-Base Voltage (Vcbo) 60 V 40 V
Emitter-Base Voltage (Vebo) 6 V 6 V
Continuous Collector Current (IC) 200 mA 200 mA
Power Dissipation (Pd) 350 mW —
Transition Frequency (ft) 300 MHz (at VCE=20V, IC=10mA) 300 MHz minimum
DC Current Gain (hFE) 100 to 300 100 to 300 @ IC=10 mA, VCE=1 V
Operating Temperature -55C to +150C —
Automotive Qualification AEC-Q101 —
RoHS Status Compliant —
Pin Configuration Pin 1: Base, Pin 2: Emitter, Pin 3: Collector —
Die Construction Epitaxial planar Epitaxial Planar
Power Dissipation (PD) — 300 mW
Collector-Emitter Saturation Voltage (Vce(sat)) — 200 mV typical @ IC=10 mA
Operating Temperature Range — -55 C to +150 C
Package / Case — SOT-23-3
Complementary PNP Type — MMBT3906-7-F
RoHS Compliance — Yes (Lead-Free, Halogen-Free, Antimony-Free)

Datasheets & Resources

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