MPX5010GS117 vs MPX5010DP Comparison
Detailed side-by-side comparison of MPX5010GS117 by NXP Semiconductors and MPX5010DP by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MPX5010GS117 - 10 kPa Pressure Sensor, 0-45°C | NXP | Industrial
MPX5010GS117 ✓ Active
Specification Comparison
| Parameter | MPX5010GS117 | MPX5010DP |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | Pressure Sensors | Pressure Sensors |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.50 | $9.60 |
| Pressure Range | [DATA_NEEDED: full-scale kPa range] | — |
| Operating Pressure | 0 to 10 kPa | — |
| Maximum Overload Pressure | [DATA_NEEDED: maximum kPa rating] | [DATA_NEEDED: max overload kPa] |
| Sensitivity | [DATA_NEEDED: mV/kPa value] | 450 mV/kPa (typical) |
| Supply Voltage | 5 V | 4.75 V to 5.25 V (5 V typical) |
| Supply Current | [DATA_NEEDED: typical mA] | [DATA_NEEDED: supply current mA] |
| Output Type | Analog ratiometric | Analog, ratiometric |
| Output Voltage Range | [DATA_NEEDED: Vmin to Vmax] | 0.2 V to 4.7 V |
| Linearity | [DATA_NEEDED: percent of full-scale span] | ±1.5% VFSS (typical, 0-85 C) |
| Operating Temperature | -40 °C to +125 °C | 0 C to +85 C (compensated) |
| Compensated Temperature | [DATA_NEEDED: temperature range] | — |
| Response Time | [DATA_NEEDED: ms] | — |
| Port Configuration | Single port axial, dual vertical ports | Dual axial ports, 4.93 mm (0.19 in) tube |
| Package | SOP-8 surface mount | 6-SIP Module |
| Media Compatibility | Dry, non-corrosive gases | — |
| Mounting Type | Surface Mount | Through-hole (SIP) |
| RoHS Status | [DATA_NEEDED: compliance status] | Compliant |
| Pressure Type | — | Differential |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |