MPX5010GS117 vs MPX5010DP Vergleich
Detaillierter Direktvergleich von MPX5010GS117 von NXP Semiconductors und MPX5010DP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MPX5010GS117 - 10 kPa Pressure Sensor, 0-45°C | NXP | Industrial
MPX5010GS117 ✓ Aktiv
Spezifikationsvergleich
| Parameter | MPX5010GS117 | MPX5010DP |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $11,50 | $9,60 |
| Pressure Range | [DATA_NEEDED: full-scale kPa range] | — |
| Operating Pressure | 0 to 10 kPa | — |
| Maximum Overload Pressure | [DATA_NEEDED: maximum kPa rating] | [DATA_NEEDED: max overload kPa] |
| Sensitivity | [DATA_NEEDED: mV/kPa value] | 450 mV/kPa (typical) |
| Versorgungsspannung | 5 V | 4.75 V to 5.25 V (5 V typical) |
| Versorgungsstrom | [DATA_NEEDED: typical mA] | [DATA_NEEDED: supply current mA] |
| Ausgangstyp | Analog ratiometric | Analog, ratiometric |
| Ausgangsspannungsbereich | [DATA_NEEDED: Vmin to Vmax] | 0.2 V to 4.7 V |
| Linearity | [DATA_NEEDED: percent of full-scale span] | ±1.5% VFSS (typical, 0-85 C) |
| Betriebstemperatur | -40 °C to +125 °C | 0 C to +85 C (compensated) |
| Compensated Temperature | [DATA_NEEDED: temperature range] | — |
| Response Time | [DATA_NEEDED: ms] | — |
| Port Configuration | Single port axial, dual vertical ports | Dual axial ports, 4.93 mm (0.19 in) tube |
| Gehäuse | SOP-8 surface mount | 6-SIP Module |
| Media Compatibility | Dry, non-corrosive gases | — |
| Montageart | Surface Mount | Through-hole (SIP) |
| RoHS-Status | [DATA_NEEDED: compliance status] | Compliant |
| Pressure Type | — | Differential |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |