MPX5010GS117 vs MPX5010DP Comparaison
Comparaison détaillée côte à côte de MPX5010GS117 par NXP Semiconductors et MPX5010DP par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPX5010GS117 - 10 kPa Pressure Sensor, 0-45°C | NXP | Industrial
MPX5010GS117 ✓ Actif
Comparaison des spécifications
| Paramètre | MPX5010GS117 | MPX5010DP |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $11,50 | $9,60 |
| Pressure Range | [DATA_NEEDED: full-scale kPa range] | — |
| Operating Pressure | 0 to 10 kPa | — |
| Maximum Overload Pressure | [DATA_NEEDED: maximum kPa rating] | [DATA_NEEDED: max overload kPa] |
| Sensitivity | [DATA_NEEDED: mV/kPa value] | 450 mV/kPa (typical) |
| Tension d'alimentation | 5 V | 4.75 V to 5.25 V (5 V typical) |
| Courant d'alimentation | [DATA_NEEDED: typical mA] | [DATA_NEEDED: supply current mA] |
| Type de sortie | Analog ratiometric | Analog, ratiometric |
| Plage de tension de sortie | [DATA_NEEDED: Vmin to Vmax] | 0.2 V to 4.7 V |
| Linearity | [DATA_NEEDED: percent of full-scale span] | ±1.5% VFSS (typical, 0-85 C) |
| Température de fonctionnement | -40 °C to +125 °C | 0 C to +85 C (compensated) |
| Compensated Temperature | [DATA_NEEDED: temperature range] | — |
| Response Time | [DATA_NEEDED: ms] | — |
| Port Configuration | Single port axial, dual vertical ports | Dual axial ports, 4.93 mm (0.19 in) tube |
| Boîtier | SOP-8 surface mount | 6-SIP Module |
| Media Compatibility | Dry, non-corrosive gases | — |
| Type de montage | Surface Mount | Through-hole (SIP) |
| Statut RoHS | [DATA_NEEDED: compliance status] | Compliant |
| Pressure Type | — | Differential |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |