MPX5010GS117 vs MPX5010DP Сравнение
Подробное сравнение бок о бок MPX5010GS117 от NXP Semiconductors и MPX5010DP от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MPX5010GS117 - 10 kPa Pressure Sensor, 0-45°C | NXP | Industrial
MPX5010GS117 ✓ Активен
Сравнение характеристик
| Параметр | MPX5010GS117 | MPX5010DP |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | Pressure Sensors | Pressure Sensors |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $11,50 | $9,60 |
| Pressure Range | [DATA_NEEDED: full-scale kPa range] | — |
| Operating Pressure | 0 to 10 kPa | — |
| Maximum Overload Pressure | [DATA_NEEDED: maximum kPa rating] | [DATA_NEEDED: max overload kPa] |
| Sensitivity | [DATA_NEEDED: mV/kPa value] | 450 mV/kPa (typical) |
| Напряжение питания | 5 V | 4.75 V to 5.25 V (5 V typical) |
| Ток потребления | [DATA_NEEDED: typical mA] | [DATA_NEEDED: supply current mA] |
| Тип выхода | Analog ratiometric | Analog, ratiometric |
| Диапазон выходного напряжения | [DATA_NEEDED: Vmin to Vmax] | 0.2 V to 4.7 V |
| Linearity | [DATA_NEEDED: percent of full-scale span] | ±1.5% VFSS (typical, 0-85 C) |
| Рабочая температура | -40 °C to +125 °C | 0 C to +85 C (compensated) |
| Compensated Temperature | [DATA_NEEDED: temperature range] | — |
| Response Time | [DATA_NEEDED: ms] | — |
| Port Configuration | Single port axial, dual vertical ports | Dual axial ports, 4.93 mm (0.19 in) tube |
| Корпус | SOP-8 surface mount | 6-SIP Module |
| Media Compatibility | Dry, non-corrosive gases | — |
| Тип монтажа | Surface Mount | Through-hole (SIP) |
| Статус RoHS | [DATA_NEEDED: compliance status] | Compliant |
| Pressure Type | — | Differential |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |