MRF5S19060MBR1 vs MRF5S19060NBR1 Comparison

Detailed side-by-side comparison of MRF5S19060MBR1 by NXP Semiconductors and MRF5S19060NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF5S19060MBR1 MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 Obsolete
NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Active

Specification Comparison

Parameter MRF5S19060MBR1 MRF5S19060NBR1
Brand NXP Semiconductors NXP Semiconductors
Category RF Amplifiers MOSFETs
Lifecycle Status Obsolete Active
Stock Status In Stock In Stock
Unit Price (USD) $16.40 $25.40
Transistor Type LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power)
Technology RF Power Field Effect Transistor Silicon LDMOS
Frequency Band 1.93 GHz to 1.99 GHz 1930 MHz to 1990 MHz
Typical Operating Frequency 1990 MHz —
Drain-Source Voltage (Rated) 65 V —
Nominal Drain Operating Voltage 28 V —
Output Power (Average) 12 W 12 W avg.
Power Gain 14 dB 14 dB at 1.99 GHz
Test Current (Drain) 750 mA —
Drain Current Rating (Leakage Spec) 10 uA —
VSWR Tolerance 5:1 @ 28 Vdc, 1990 MHz, 12 W avg —
Input Matching Internally matched —
ESD Protection Integrated —
Package TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) TO-272 WB-4 (overmolded plastic)
Package Outline Case 1486-03, Style 1 —
Mounting Style Flange / surface mount with thermal pad —
Maximum Junction Temperature 200 degree C —
Packaging Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) —
Target Application PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Configuration — Dual Die (2 x N), Common Source
Output Power (P1dB) — 60 W (CW/peak)
Drain Supply Voltage — 28 V (typical)
Drain-Source Voltage (Vdss) — 65 V (max)
Drain Current — 750 mA (typical operating DC)
Mounting Type — Surface Mount (SMD)
Pin Count — 5
Peak Reflow Temperature — 260 C
Maximum Power Dissipation (Absolute) — 218.8 W
RoHS Status — [DATA_NEEDED: RoHS compliance status]
MSL Level — [DATA_NEEDED: MSL moisture sensitivity level]

Datasheets & Resources

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