MRF5S19060MBR1 vs MRF5S19060NBR1 Vergleich
Detaillierter Direktvergleich von MRF5S19060MBR1 von NXP Semiconductors und MRF5S19060NBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale
MRF5S19060MBR1 ObsoleteSpezifikationsvergleich
| Parameter | MRF5S19060MBR1 | MRF5S19060NBR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | MOSFETs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $16,40 | $25,40 |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Technology | RF Power Field Effect Transistor | Silicon LDMOS |
| Frequency Band | 1.93 GHz to 1.99 GHz | 1930 MHz to 1990 MHz |
| Typical Operating Frequency | 1990 MHz | — |
| Drain-Source Voltage (Rated) | 65 V | — |
| Nominal Drain Operating Voltage | 28 V | — |
| Output Power (Average) | 12 W | 12 W avg. |
| Power Gain | 14 dB | 14 dB at 1.99 GHz |
| Test Current (Drain) | 750 mA | — |
| Drain Current Rating (Leakage Spec) | 10 uA | — |
| VSWR Tolerance | 5:1 @ 28 Vdc, 1990 MHz, 12 W avg | — |
| Input Matching | Internally matched | — |
| ESD Protection | Integrated | — |
| Gehäuse | TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) | TO-272 WB-4 (overmolded plastic) |
| Package Outline | Case 1486-03, Style 1 | — |
| Montagestil | Flange / surface mount with thermal pad | — |
| Maximum Junction Temperature | 200 degree C | — |
| Packaging | Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) | — |
| Target Application | PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Configuration | — | Dual Die (2 x N), Common Source |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Drain Supply Voltage | — | 28 V (typical) |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Drain Current | — | 750 mA (typical operating DC) |
| Montageart | — | Surface Mount (SMD) |
| Pin-Anzahl | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| RoHS-Status | — | [DATA_NEEDED: RoHS compliance status] |
| MSL-Level | — | [DATA_NEEDED: MSL moisture sensitivity level] |