MRF5S19060MBR1 vs MRF5S19060NBR1 Сравнение
Подробное сравнение бок о бок MRF5S19060MBR1 от NXP Semiconductors и MRF5S19060NBR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale
MRF5S19060MBR1 ObsoleteNXP Semiconductors
MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MRF5S19060NBR1 ✓ АктивенСравнение характеристик
| Параметр | MRF5S19060MBR1 | MRF5S19060NBR1 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | RF Amplifiers | MOSFETs |
| Статус жизненного цикла | Obsolete | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $16,40 | $25,40 |
| Тип транзистора | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Technology | RF Power Field Effect Transistor | Silicon LDMOS |
| Frequency Band | 1.93 GHz to 1.99 GHz | 1930 MHz to 1990 MHz |
| Typical Operating Frequency | 1990 MHz | — |
| Drain-Source Voltage (Rated) | 65 V | — |
| Nominal Drain Operating Voltage | 28 V | — |
| Output Power (Average) | 12 W | 12 W avg. |
| Power Gain | 14 dB | 14 dB at 1.99 GHz |
| Test Current (Drain) | 750 mA | — |
| Drain Current Rating (Leakage Spec) | 10 uA | — |
| VSWR Tolerance | 5:1 @ 28 Vdc, 1990 MHz, 12 W avg | — |
| Input Matching | Internally matched | — |
| ESD Protection | Integrated | — |
| Корпус | TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) | TO-272 WB-4 (overmolded plastic) |
| Package Outline | Case 1486-03, Style 1 | — |
| Способ монтажа | Flange / surface mount with thermal pad | — |
| Maximum Junction Temperature | 200 degree C | — |
| Packaging | Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) | — |
| Target Application | PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Configuration | — | Dual Die (2 x N), Common Source |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Drain Supply Voltage | — | 28 V (typical) |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Drain Current | — | 750 mA (typical operating DC) |
| Тип монтажа | — | Surface Mount (SMD) |
| Число выводов | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Статус RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Уровень MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |