MRF5S19060MBR1 vs MRF5S19060NBR1 Comparaison
Comparaison détaillée côte à côte de MRF5S19060MBR1 par NXP Semiconductors et MRF5S19060NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale
MRF5S19060MBR1 ObsoleteComparaison des spécifications
| Paramètre | MRF5S19060MBR1 | MRF5S19060NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | MOSFETs |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $16,40 | $25,40 |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Technology | RF Power Field Effect Transistor | Silicon LDMOS |
| Frequency Band | 1.93 GHz to 1.99 GHz | 1930 MHz to 1990 MHz |
| Typical Operating Frequency | 1990 MHz | — |
| Drain-Source Voltage (Rated) | 65 V | — |
| Nominal Drain Operating Voltage | 28 V | — |
| Output Power (Average) | 12 W | 12 W avg. |
| Power Gain | 14 dB | 14 dB at 1.99 GHz |
| Test Current (Drain) | 750 mA | — |
| Drain Current Rating (Leakage Spec) | 10 uA | — |
| VSWR Tolerance | 5:1 @ 28 Vdc, 1990 MHz, 12 W avg | — |
| Input Matching | Internally matched | — |
| ESD Protection | Integrated | — |
| Boîtier | TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) | TO-272 WB-4 (overmolded plastic) |
| Package Outline | Case 1486-03, Style 1 | — |
| Style de montage | Flange / surface mount with thermal pad | — |
| Maximum Junction Temperature | 200 degree C | — |
| Packaging | Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) | — |
| Target Application | PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Configuration | — | Dual Die (2 x N), Common Source |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Drain Supply Voltage | — | 28 V (typical) |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Drain Current | — | 750 mA (typical operating DC) |
| Type de montage | — | Surface Mount (SMD) |
| Nombre de broches | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Statut RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Niveau MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |