MRF5S19060MBR1 vs MRF5S19060NBR1 비교

다음의 상세 나란히 비교: MRF5S19060MBR1 제조: NXP Semiconductors 및 MRF5S19060NBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF5S19060MBR1 MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 Obsolete
NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ 활성

사양 비교

파라미터 MRF5S19060MBR1 MRF5S19060NBR1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 RF Amplifiers MOSFETs
수명 주기 상태 Obsolete 활성
재고 상태 In Stock In Stock
단가 (USD) $16.40 $25.40
트랜지스터 유형 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power)
Technology RF Power Field Effect Transistor Silicon LDMOS
Frequency Band 1.93 GHz to 1.99 GHz 1930 MHz to 1990 MHz
Typical Operating Frequency 1990 MHz —
Drain-Source Voltage (Rated) 65 V —
Nominal Drain Operating Voltage 28 V —
Output Power (Average) 12 W 12 W avg.
Power Gain 14 dB 14 dB at 1.99 GHz
Test Current (Drain) 750 mA —
Drain Current Rating (Leakage Spec) 10 uA —
VSWR Tolerance 5:1 @ 28 Vdc, 1990 MHz, 12 W avg —
Input Matching Internally matched —
ESD Protection Integrated —
패키지 TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) TO-272 WB-4 (overmolded plastic)
Package Outline Case 1486-03, Style 1 —
장착 스타일 Flange / surface mount with thermal pad —
Maximum Junction Temperature 200 degree C —
Packaging Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) —
Target Application PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Configuration — Dual Die (2 x N), Common Source
Output Power (P1dB) — 60 W (CW/peak)
Drain Supply Voltage — 28 V (typical)
Drain-Source Voltage (Vdss) — 65 V (max)
Drain Current — 750 mA (typical operating DC)
실장 유형 — Surface Mount (SMD)
핀 수 — 5
Peak Reflow Temperature — 260 C
Maximum Power Dissipation (Absolute) — 218.8 W
RoHS 상태 — [DATA_NEEDED: RoHS compliance status]
MSL 레벨 — [DATA_NEEDED: MSL moisture sensitivity level]

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