MRF5S19060NR1 vs MRF5S19060NBR1 Comparison

Detailed side-by-side comparison of MRF5S19060NR1 by NXP Semiconductors and MRF5S19060NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF5S19060NR1 MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 ✓ Active
NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Active

Specification Comparison

Parameter MRF5S19060NR1 MRF5S19060NBR1
Brand NXP Semiconductors NXP Semiconductors
Category RF Transceivers MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $17.95 $25.40
Transistor Type LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power)
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Average) 12 W 12 W avg.
Typical Gain 14 dB at 1.99 GHz —
Drain-Source Voltage (Rated) 65 V —
Test Supply Voltage 28 V —
Test Quiescent Current 750 mA —
Package / Case TO-270 WB-4 (over-molded plastic, 4-lead) —
Mounting Style Surface Mount —
Configuration Single, Common-Source Dual Die (2 x N), Common Source
Application Base station / broadband commercial amplifier —
Number of Pins 5 —
RoHS Status Compliant [DATA_NEEDED: RoHS compliance status]
Lead Free Status Lead Free —
Operating Mode Class AB (typical RF PA) —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Frequency Band — 1930 MHz to 1990 MHz
Output Power (P1dB) — 60 W (CW/peak)
Drain Supply Voltage — 28 V (typical)
Drain-Source Voltage (Vdss) — 65 V (max)
Power Gain — 14 dB at 1.99 GHz
Drain Current — 750 mA (typical operating DC)
Package — TO-272 WB-4 (overmolded plastic)
Mounting Type — Surface Mount (SMD)
Pin Count — 5
Peak Reflow Temperature — 260 C
Maximum Power Dissipation (Absolute) — 218.8 W
Technology — Silicon LDMOS
MSL Level — [DATA_NEEDED: MSL moisture sensitivity level]

Datasheets & Resources

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