MRF5S19060NR1 vs MRF5S19060NBR1 对比

详细并排对比 MRF5S19060NR1 出自 NXP Semiconductors 和 MRF5S19060NBR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF5S19060NR1 MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 ✓ 量产中
NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ 量产中

规格对比

参数 MRF5S19060NR1 MRF5S19060NBR1
品牌 NXP Semiconductors NXP Semiconductors
分类 RF Transceivers MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $17.95 $25.40
晶体管类型 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power)
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Average) 12 W 12 W avg.
Typical Gain 14 dB at 1.99 GHz —
Drain-Source Voltage (Rated) 65 V —
Test Supply Voltage 28 V —
Test Quiescent Current 750 mA —
封装 / 外壳 TO-270 WB-4 (over-molded plastic, 4-lead) —
安装方式 Surface Mount —
Configuration Single, Common-Source Dual Die (2 x N), Common Source
Application Base station / broadband commercial amplifier —
引脚数 5 —
RoHS 状态 Compliant [DATA_NEEDED: RoHS compliance status]
Lead Free Status Lead Free —
Operating Mode Class AB (typical RF PA) —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Frequency Band — 1930 MHz to 1990 MHz
Output Power (P1dB) — 60 W (CW/peak)
Drain Supply Voltage — 28 V (typical)
Drain-Source Voltage (Vdss) — 65 V (max)
Power Gain — 14 dB at 1.99 GHz
Drain Current — 750 mA (typical operating DC)
封装 — TO-272 WB-4 (overmolded plastic)
安装类型 — Surface Mount (SMD)
引脚数量 — 5
Peak Reflow Temperature — 260 C
Maximum Power Dissipation (Absolute) — 218.8 W
Technology — Silicon LDMOS
MSL 等级 — [DATA_NEEDED: MSL moisture sensitivity level]

数据手册与资源

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