MRF5S19060NR1 vs MRF5S19060NBR1 비교

다음의 상세 나란히 비교: MRF5S19060NR1 제조: NXP Semiconductors 및 MRF5S19060NBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF5S19060NR1 MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 ✓ 활성
NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ 활성

사양 비교

파라미터 MRF5S19060NR1 MRF5S19060NBR1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 RF Transceivers MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $17.95 $25.40
트랜지스터 유형 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power)
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Average) 12 W 12 W avg.
Typical Gain 14 dB at 1.99 GHz —
Drain-Source Voltage (Rated) 65 V —
Test Supply Voltage 28 V —
Test Quiescent Current 750 mA —
패키지 / 케이스 TO-270 WB-4 (over-molded plastic, 4-lead) —
장착 스타일 Surface Mount —
Configuration Single, Common-Source Dual Die (2 x N), Common Source
Application Base station / broadband commercial amplifier —
핀 수 5 —
RoHS 상태 Compliant [DATA_NEEDED: RoHS compliance status]
Lead Free Status Lead Free —
Operating Mode Class AB (typical RF PA) —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Frequency Band — 1930 MHz to 1990 MHz
Output Power (P1dB) — 60 W (CW/peak)
Drain Supply Voltage — 28 V (typical)
Drain-Source Voltage (Vdss) — 65 V (max)
Power Gain — 14 dB at 1.99 GHz
Drain Current — 750 mA (typical operating DC)
패키지 — TO-272 WB-4 (overmolded plastic)
실장 유형 — Surface Mount (SMD)
핀 수 — 5
Peak Reflow Temperature — 260 C
Maximum Power Dissipation (Absolute) — 218.8 W
Technology — Silicon LDMOS
MSL 레벨 — [DATA_NEEDED: MSL moisture sensitivity level]

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