MRF5S19060NR1 vs MRF5S19060NBR1 Vergleich

Detaillierter Direktvergleich von MRF5S19060NR1 von NXP Semiconductors und MRF5S19060NBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF5S19060NR1 MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 ✓ Aktiv
NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF5S19060NR1 MRF5S19060NBR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie RF Transceivers MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $17,95 $25,40
Transistortyp LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power)
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Average) 12 W 12 W avg.
Typical Gain 14 dB at 1.99 GHz —
Drain-Source Voltage (Rated) 65 V —
Test Supply Voltage 28 V —
Test Quiescent Current 750 mA —
Gehäuse / Bauform TO-270 WB-4 (over-molded plastic, 4-lead) —
Montagestil Surface Mount —
Configuration Single, Common-Source Dual Die (2 x N), Common Source
Application Base station / broadband commercial amplifier —
Anzahl der Pins 5 —
RoHS-Status Compliant [DATA_NEEDED: RoHS compliance status]
Lead Free Status Lead Free —
Operating Mode Class AB (typical RF PA) —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Frequency Band — 1930 MHz to 1990 MHz
Output Power (P1dB) — 60 W (CW/peak)
Drain Supply Voltage — 28 V (typical)
Drain-Source Voltage (Vdss) — 65 V (max)
Power Gain — 14 dB at 1.99 GHz
Drain Current — 750 mA (typical operating DC)
Gehäuse — TO-272 WB-4 (overmolded plastic)
Montageart — Surface Mount (SMD)
Pin-Anzahl — 5
Peak Reflow Temperature — 260 C
Maximum Power Dissipation (Absolute) — 218.8 W
Technology — Silicon LDMOS
MSL-Level — [DATA_NEEDED: MSL moisture sensitivity level]

Datenblätter & Ressourcen

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