MRF5S19060NR1 vs MRF5S19060NBR1 Comparação

Comparação detalhada lado a lado de MRF5S19060NR1 por NXP Semiconductors e MRF5S19060NBR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF5S19060NR1 MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 ✓ Ativo
NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Ativo

Comparação de especificações

Parâmetro MRF5S19060NR1 MRF5S19060NBR1
Marca NXP Semiconductors NXP Semiconductors
Categoria RF Transceivers MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $17,95 $25,40
Tipo de transistor LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power)
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Average) 12 W 12 W avg.
Typical Gain 14 dB at 1.99 GHz —
Drain-Source Voltage (Rated) 65 V —
Test Supply Voltage 28 V —
Test Quiescent Current 750 mA —
Encapsulamento / Caixa TO-270 WB-4 (over-molded plastic, 4-lead) —
Estilo de montagem Surface Mount —
Configuration Single, Common-Source Dual Die (2 x N), Common Source
Application Base station / broadband commercial amplifier —
Número de pinos 5 —
Status RoHS Compliant [DATA_NEEDED: RoHS compliance status]
Lead Free Status Lead Free —
Operating Mode Class AB (typical RF PA) —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Frequency Band — 1930 MHz to 1990 MHz
Output Power (P1dB) — 60 W (CW/peak)
Drain Supply Voltage — 28 V (typical)
Drain-Source Voltage (Vdss) — 65 V (max)
Power Gain — 14 dB at 1.99 GHz
Drain Current — 750 mA (typical operating DC)
Encapsulamento — TO-272 WB-4 (overmolded plastic)
Tipo de montagem — Surface Mount (SMD)
Contagem de pinos — 5
Peak Reflow Temperature — 260 C
Maximum Power Dissipation (Absolute) — 218.8 W
Technology — Silicon LDMOS
Nível MSL — [DATA_NEEDED: MSL moisture sensitivity level]

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