MRF6S21100NR1 vs MRF6S21100NBR1 Comparison

Detailed side-by-side comparison of MRF6S21100NR1 by NXP Semiconductors and MRF6S21100NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF6S21100NR1 MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 ✓ Active
NXP Semiconductors
MRF6S21100NBR1 MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 Obsolete

Specification Comparison

Parameter MRF6S21100NR1 MRF6S21100NBR1
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $21.24 $25.00
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Transistor Type LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode LDMOS (Lateral MOSFET)
Technology RF Power LDMOS (7th-generation) LDMOS, enhancement-mode
Frequency Band 2110 MHz to 2170 MHz (W-CDMA downlink) —
Drain Voltage (VDD) 28 V —
Drain Current (Continuous) 1.05 A —
Drain Current (Pulsed) [DATA_NEEDED: pulsed drain current value] —
Power Gain 14.5 dB typical at 2.11 GHz —
Output Power (Pout) 23 W average (W-CDMA) —
Quiescent Current (IDQ) 1600 mA —
Package / Case TO-270 WB-4 (Case 1486-03, Style 1) TO-272 WB-4 (plastic over-molded)
Mounting Type Surface Mount (plastic overmold) Surface Mount / Flange Mount with PCB thermal pad
Operating Mode Class AB —
Modulation Support W-CDMA, TDMA, CDMA, multi-carrier —
Drain-Source Breakdown (V(BR)DSS) 68 V (rated) —
RoHS Status [DATA_NEEDED: confirm RoHS compliance status] [DATA_NEEDED: RoHS status]
Operating Frequency Range — 2110 MHz to 2170 MHz
Drain Supply Voltage (Typical) — 28 V
Pout (Average, W-CDMA) — 23 W
Power Gain (Typical) — 14.5 dB
Operating Current (at Pout) — 1.05 A
Quiescent Current (IDQ, Typical) — 1600 mA
Drain Voltage Rated — 68 V
Supplier Device Package — TO-272BB
Application — W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage
Part Status — Obsolete
Operating Temperature — [DATA_NEEDED: operating temperature range]

Datasheets & Resources

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