MRF6S21100NR1 vs MRF6S21100NBR1 Vergleich

Detaillierter Direktvergleich von MRF6S21100NR1 von NXP Semiconductors und MRF6S21100NBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6S21100NR1 MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 ✓ Aktiv
NXP Semiconductors
MRF6S21100NBR1 MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 Obsolete

Spezifikationsvergleich

Parameter MRF6S21100NR1 MRF6S21100NBR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $21,24 $25,00
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Transistortyp LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode LDMOS (Lateral MOSFET)
Technology RF Power LDMOS (7th-generation) LDMOS, enhancement-mode
Frequency Band 2110 MHz to 2170 MHz (W-CDMA downlink) —
Drain Voltage (VDD) 28 V —
Drain Current (Continuous) 1.05 A —
Drain Current (Pulsed) [DATA_NEEDED: pulsed drain current value] —
Power Gain 14.5 dB typical at 2.11 GHz —
Output Power (Pout) 23 W average (W-CDMA) —
Quiescent Current (IDQ) 1600 mA —
Gehäuse / Bauform TO-270 WB-4 (Case 1486-03, Style 1) TO-272 WB-4 (plastic over-molded)
Montageart Surface Mount (plastic overmold) Surface Mount / Flange Mount with PCB thermal pad
Operating Mode Class AB —
Modulation Support W-CDMA, TDMA, CDMA, multi-carrier —
Drain-Source Breakdown (V(BR)DSS) 68 V (rated) —
RoHS-Status [DATA_NEEDED: confirm RoHS compliance status] [DATA_NEEDED: RoHS status]
Operating Frequency Range — 2110 MHz to 2170 MHz
Drain Supply Voltage (Typical) — 28 V
Pout (Average, W-CDMA) — 23 W
Power Gain (Typical) — 14.5 dB
Operating Current (at Pout) — 1.05 A
Quiescent Current (IDQ, Typical) — 1600 mA
Drain Voltage Rated — 68 V
Supplier Device Package — TO-272BB
Application — W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage
Part Status — Obsolete
Betriebstemperatur — [DATA_NEEDED: operating temperature range]

Datenblätter & Ressourcen

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