MRF6S21100NR1 vs MRF6S21100NBR1 Comparação

Comparação detalhada lado a lado de MRF6S21100NR1 por NXP Semiconductors e MRF6S21100NBR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF6S21100NR1 MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 ✓ Ativo
NXP Semiconductors
MRF6S21100NBR1 MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 Obsolete

Comparação de especificações

Parâmetro MRF6S21100NR1 MRF6S21100NBR1
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Obsolete
Status do estoque In Stock In Stock
Preço unitário (USD) $21,24 $25,00
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Tipo de transistor LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode LDMOS (Lateral MOSFET)
Technology RF Power LDMOS (7th-generation) LDMOS, enhancement-mode
Frequency Band 2110 MHz to 2170 MHz (W-CDMA downlink) —
Drain Voltage (VDD) 28 V —
Drain Current (Continuous) 1.05 A —
Drain Current (Pulsed) [DATA_NEEDED: pulsed drain current value] —
Power Gain 14.5 dB typical at 2.11 GHz —
Output Power (Pout) 23 W average (W-CDMA) —
Quiescent Current (IDQ) 1600 mA —
Encapsulamento / Caixa TO-270 WB-4 (Case 1486-03, Style 1) TO-272 WB-4 (plastic over-molded)
Tipo de montagem Surface Mount (plastic overmold) Surface Mount / Flange Mount with PCB thermal pad
Operating Mode Class AB —
Modulation Support W-CDMA, TDMA, CDMA, multi-carrier —
Drain-Source Breakdown (V(BR)DSS) 68 V (rated) —
Status RoHS [DATA_NEEDED: confirm RoHS compliance status] [DATA_NEEDED: RoHS status]
Operating Frequency Range — 2110 MHz to 2170 MHz
Drain Supply Voltage (Typical) — 28 V
Pout (Average, W-CDMA) — 23 W
Power Gain (Typical) — 14.5 dB
Operating Current (at Pout) — 1.05 A
Quiescent Current (IDQ, Typical) — 1600 mA
Drain Voltage Rated — 68 V
Supplier Device Package — TO-272BB
Application — W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage
Part Status — Obsolete
Temperatura de operação — [DATA_NEEDED: operating temperature range]

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