MRF6S21100NR1 vs MRF6S21100NBR1 Comparaison
Comparaison détaillée côte à côte de MRF6S21100NR1 par NXP Semiconductors et MRF6S21100NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF6S21100NR1 | MRF6S21100NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $21,24 | $25,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode LDMOS (Lateral MOSFET) |
| Technology | RF Power LDMOS (7th-generation) | LDMOS, enhancement-mode |
| Frequency Band | 2110 MHz to 2170 MHz (W-CDMA downlink) | — |
| Drain Voltage (VDD) | 28 V | — |
| Drain Current (Continuous) | 1.05 A | — |
| Drain Current (Pulsed) | [DATA_NEEDED: pulsed drain current value] | — |
| Power Gain | 14.5 dB typical at 2.11 GHz | — |
| Output Power (Pout) | 23 W average (W-CDMA) | — |
| Quiescent Current (IDQ) | 1600 mA | — |
| Boîtier / Format | TO-270 WB-4 (Case 1486-03, Style 1) | TO-272 WB-4 (plastic over-molded) |
| Type de montage | Surface Mount (plastic overmold) | Surface Mount / Flange Mount with PCB thermal pad |
| Operating Mode | Class AB | — |
| Modulation Support | W-CDMA, TDMA, CDMA, multi-carrier | — |
| Drain-Source Breakdown (V(BR)DSS) | 68 V (rated) | — |
| Statut RoHS | [DATA_NEEDED: confirm RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Operating Frequency Range | — | 2110 MHz to 2170 MHz |
| Drain Supply Voltage (Typical) | — | 28 V |
| Pout (Average, W-CDMA) | — | 23 W |
| Power Gain (Typical) | — | 14.5 dB |
| Operating Current (at Pout) | — | 1.05 A |
| Quiescent Current (IDQ, Typical) | — | 1600 mA |
| Drain Voltage Rated | — | 68 V |
| Supplier Device Package | — | TO-272BB |
| Application | — | W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage |
| Part Status | — | Obsolete |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |