MRF6S21100NR1 vs MRF6S21100NBR1 Сравнение

Подробное сравнение бок о бок MRF6S21100NR1 от NXP Semiconductors и MRF6S21100NBR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

NXP Semiconductors
MRF6S21100NR1 MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 ✓ Активен
NXP Semiconductors
MRF6S21100NBR1 MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 Obsolete

Сравнение характеристик

Параметр MRF6S21100NR1 MRF6S21100NBR1
Бренд NXP Semiconductors NXP Semiconductors
Категория MOSFETs MOSFETs
Статус жизненного цикла Активен Obsolete
Наличие In Stock In Stock
Цена за единицу (USD) $21,24 $25,00
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Тип транзистора LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode LDMOS (Lateral MOSFET)
Technology RF Power LDMOS (7th-generation) LDMOS, enhancement-mode
Frequency Band 2110 MHz to 2170 MHz (W-CDMA downlink) —
Drain Voltage (VDD) 28 V —
Drain Current (Continuous) 1.05 A —
Drain Current (Pulsed) [DATA_NEEDED: pulsed drain current value] —
Power Gain 14.5 dB typical at 2.11 GHz —
Output Power (Pout) 23 W average (W-CDMA) —
Quiescent Current (IDQ) 1600 mA —
Корпус / Типоразмер TO-270 WB-4 (Case 1486-03, Style 1) TO-272 WB-4 (plastic over-molded)
Тип монтажа Surface Mount (plastic overmold) Surface Mount / Flange Mount with PCB thermal pad
Operating Mode Class AB —
Modulation Support W-CDMA, TDMA, CDMA, multi-carrier —
Drain-Source Breakdown (V(BR)DSS) 68 V (rated) —
Статус RoHS [DATA_NEEDED: confirm RoHS compliance status] [DATA_NEEDED: RoHS status]
Operating Frequency Range — 2110 MHz to 2170 MHz
Drain Supply Voltage (Typical) — 28 V
Pout (Average, W-CDMA) — 23 W
Power Gain (Typical) — 14.5 dB
Operating Current (at Pout) — 1.05 A
Quiescent Current (IDQ, Typical) — 1600 mA
Drain Voltage Rated — 68 V
Supplier Device Package — TO-272BB
Application — W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage
Part Status — Obsolete
Рабочая температура — [DATA_NEEDED: operating temperature range]

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