MRF6S21100NR1 vs MRF6S21100NBR1 对比
详细并排对比 MRF6S21100NR1 出自 NXP Semiconductors 和 MRF6S21100NBR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF6S21100NR1 | MRF6S21100NBR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $21.24 | $25.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode LDMOS (Lateral MOSFET) |
| Technology | RF Power LDMOS (7th-generation) | LDMOS, enhancement-mode |
| Frequency Band | 2110 MHz to 2170 MHz (W-CDMA downlink) | — |
| Drain Voltage (VDD) | 28 V | — |
| Drain Current (Continuous) | 1.05 A | — |
| Drain Current (Pulsed) | [DATA_NEEDED: pulsed drain current value] | — |
| Power Gain | 14.5 dB typical at 2.11 GHz | — |
| Output Power (Pout) | 23 W average (W-CDMA) | — |
| Quiescent Current (IDQ) | 1600 mA | — |
| 封装 / 外壳 | TO-270 WB-4 (Case 1486-03, Style 1) | TO-272 WB-4 (plastic over-molded) |
| 安装类型 | Surface Mount (plastic overmold) | Surface Mount / Flange Mount with PCB thermal pad |
| Operating Mode | Class AB | — |
| Modulation Support | W-CDMA, TDMA, CDMA, multi-carrier | — |
| Drain-Source Breakdown (V(BR)DSS) | 68 V (rated) | — |
| RoHS 状态 | [DATA_NEEDED: confirm RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Operating Frequency Range | — | 2110 MHz to 2170 MHz |
| Drain Supply Voltage (Typical) | — | 28 V |
| Pout (Average, W-CDMA) | — | 23 W |
| Power Gain (Typical) | — | 14.5 dB |
| Operating Current (at Pout) | — | 1.05 A |
| Quiescent Current (IDQ, Typical) | — | 1600 mA |
| Drain Voltage Rated | — | 68 V |
| Supplier Device Package | — | TO-272BB |
| Application | — | W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage |
| Part Status | — | Obsolete |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |