MT29F4G08ABADAWP-IT:D vs MX30LF4G18AC-TI-T Comparison

Detailed side-by-side comparison of MT29F4G08ABADAWP-IT:D by Micron Technology and MX30LF4G18AC-TI-T by Macronix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT29F4G08ABADAWP-IT:D MT29F4G08ABADAWP-IT:D - 4Gbit SLC NAND Flash Parallel x8 | Micron

MT29F4G08ABADAWP-IT:D - 4Gbit SLC NAND Flash Parallel x8 | Micron

MT29F4G08ABADAWP-IT:D ✓ Active

Specification Comparison

Parameter MT29F4G08ABADAWP-IT:D MX30LF4G18AC-TI-T
Brand Micron Technology Macronix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.45 $3.05
Memory Type FLASH - NAND (SLC) Non-volatile NAND Flash (SLC)
Memory Size 4 Gbit (512M x 8) —
Memory Organization 512M x 8 —
Interface Parallel (byte-wide, x8) Parallel (asynchronous), ONFI 1.0 compliant
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
Access Time (tRC) 25 ns 20 ns (typical)
ONFI Version ONFI 2.1 —
Package / Case 48-TFSOP (0.724", 18.40 mm width) —
Operating Temperature -40 C to +85 C (Industrial) -40 C to +85 C (industrial)
Page Size 2048 + 64 bytes (or 4096 + 128 bytes in ONFI 2.1) 2048 byte + 64 byte spare area
Block Size 64 pages x 4 KB 64 pages (128 KB + 4 KB spare)
Planes per Die 2 —
Endurance (P/E Cycles) 100,000 typical (SLC) [DATA_NEEDED: endurance cycles]
Packaging Tray —
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Density — 4 Gbit (512 Mbyte)
Organization — 512M x 8 bit
Data Bus Width — 8 bit
Required ECC — 4-bit ECC per 528-byte sector
Program Time (typical) — 300 us per page
Erase Time (typical) — 2 ms per block
Data Retention — 10 years
Package — 48-pin TSOP-I (12 mm x 20 mm)

Datasheets & Resources

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