MT40A1G8SA-062E vs MT40A1G8SA-075:E Comparison
Detailed side-by-side comparison of MT40A1G8SA-062E by Micron Technology and MT40A1G8SA-075:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A1G8SA-062E
MT40A1G8SA-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A1G8SA-062E β ActiveMicron Technology
MT40A1G8SA-075:E
MT40A1G8SA-075:E - 8Gb DDR4 SDRAM 1.33GHz | Micron
MT40A1G8SA-075:E β ActiveSpecification Comparison
| Parameter | MT40A1G8SA-062E | MT40A1G8SA-075:E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.05 | $6.30 |
| Memory Type | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8 Gbit | β |
| Organization | 1G x 8 | β |
| Data Rate | 3200 MT/s (DDR4-3200) | 2666 MT/s |
| Clock Frequency | 1.6 GHz | 1.33 GHz |
| Access Time (CAS Latency) | CL22 at 3200 MT/s | β |
| Row Access Time | 19 ns | β |
| VDD / VDDQ | 1.2 V +/-60 mV | β |
| VPP | 2.5 V, -125 mV, +250 mV | β |
| Internal Banks | 16 banks (4 bank groups x 4 banks) | β |
| Refresh | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) | β |
| Operating Temperature | 0C to +95C (CT range; IT: -40C to +95C) | β |
| I/O Type | 1.2 V pseudo open-drain | β |
| Burst Length | BL8, BC4 (burst chop) | β |
| Package | 78-ball FBGA (7.5 x 11 mm) | 78-FBGA (7.5x11 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Features | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ | β |
| Memory Size | β | 8Gbit (1G x 8) |
| Interface | β | Parallel |
| Supply Voltage (VDD/VDDQ) | β | 1.2V Β±60mV |
| VPP Supply Voltage | β | 2.5V (-125mV, +250mV) |
| Operating Temperature Range | β | 0Β°C to +95Β°C |
| Refresh Time | β | 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C |
| Write Leveling | β | Supported |
| Dynamic On-Chip Termination | β | Supported |
| CRC Function | β | Supported |
| Data Mask Function | β | Supported |
| RoHS Status | β | Compliant |