MT40A1G8SA-062E vs MT40A1G8SA-075:E Perbandingan

Perbandingan bersamaan detil MT40A1G8SA-062E dari Micron Technology dan MT40A1G8SA-075:E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
MT40A1G8SA-062E MT40A1G8SA-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A1G8SA-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A1G8SA-062E ✓ Aktif
Micron Technology
MT40A1G8SA-075:E MT40A1G8SA-075:E - 8Gb DDR4 SDRAM 1.33GHz | Micron

MT40A1G8SA-075:E - 8Gb DDR4 SDRAM 1.33GHz | Micron

MT40A1G8SA-075:E ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MT40A1G8SA-062E MT40A1G8SA-075:E
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM SDRAM - DDR4
Density 8 Gbit —
Organisasi 1G x 8 —
Laju Data 3200 MT/s (DDR4-3200) 2666 MT/s
Clock Frequency 1.6 GHz 1.33 GHz
Access Time (CAS Latency) CL22 at 3200 MT/s —
Row Access Time 19 ns —
VDD / VDDQ 1.2 V +/-60 mV —
VPP 2.5 V, -125 mV, +250 mV —
Internal Banks 16 banks (4 bank groups x 4 banks) —
Refresh 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) —
Suhu Kerja 0C to +95C (CT range; IT: -40C to +95C) —
I/O Type 1.2 V pseudo open-drain —
Burst Length BL8, BC4 (burst chop) —
Paket 78-ball FBGA (7.5 x 11 mm) 78-FBGA (7.5x11 mm)
Tipe Mounting Surface Mount Surface Mount
Fitur Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ —
Ukuran Memori — 8Gbit (1G x 8)
Antarmuka — Parallel
Supply Voltage (VDD/VDDQ) — 1.2V ±60mV
VPP Supply Voltage — 2.5V (-125mV, +250mV)
Rentang Suhu Kerja — 0°C to +95°C
Refresh Time — 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C
Write Leveling — Supported
Dynamic On-Chip Termination — Supported
CRC Function — Supported
Data Mask Function — Supported
Status RoHS — Compliant

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon