MT40A1G8SA-062E vs MT40A1G8SA-075:E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A1G8SA-062E disebabkan oleh Micron Technology dan MT40A1G8SA-075:E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT40A1G8SA-062E | MT40A1G8SA-075:E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8 Gbit | — |
| Organisasi | 1G x 8 | — |
| Kadar Data | 3200 MT/s (DDR4-3200) | 2666 MT/s |
| Clock Frequency | 1.6 GHz | 1.33 GHz |
| Access Time (CAS Latency) | CL22 at 3200 MT/s | — |
| Row Access Time | 19 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV, +250 mV | — |
| Internal Banks | 16 banks (4 bank groups x 4 banks) | — |
| Refresh | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) | — |
| Suhu Operasi | 0C to +95C (CT range; IT: -40C to +95C) | — |
| I/O Type | 1.2 V pseudo open-drain | — |
| Burst Length | BL8, BC4 (burst chop) | — |
| Kemasan | 78-ball FBGA (7.5 x 11 mm) | 78-FBGA (7.5x11 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Ciri-ciri | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ | — |
| Saiz Ingatan | — | 8Gbit (1G x 8) |
| Antaramuka | — | Parallel |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| Gambaran Suhu Operasi | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Write Leveling | — | Supported |
| Dynamic On-Chip Termination | — | Supported |
| CRC Function | — | Supported |
| Data Mask Function | — | Supported |
| Status RoHS | — | Compliant |