MT40A1G8SA-075:E vs K4A8G085WB-BIWE Comparison
Detailed side-by-side comparison of MT40A1G8SA-075:E by Micron Technology and K4A8G085WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MT40A1G8SA-075:E | K4A8G085WB-BIWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.30 | $6.50 |
| Memory Type | SDRAM - DDR4 | DDR4 SDRAM |
| Memory Size | 8Gbit (1G x 8) | 8 Gb |
| Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Data Rate | 2666 MT/s | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| Operating Temperature Range | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Package | 78-FBGA (7.5x11 mm) | 78-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Write Leveling | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| CRC Function | Supported | — |
| Data Mask Function | Supported | — |
| RoHS Status | Compliant | Compliant |
| Memory Organization | — | 1G x 8 |
| Supply Voltage | — | 1.2 V |
| Operating Temperature | — | 0°C to +85°C |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| CAS Latency | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |