H5ANAG8NBJR-PBC - 16Gb DDR4 SDRAM x8, FBGA-78 | SK Hynix
MPN: H5ANAG8NBJR-PBC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $42 | $42.00 |
| 10 | $39.5 | $395.00 |
| 100 | $36.8 | $3,680.00 |
| 500 | $34.2 | $17,100.00 |
| 1,000 | $31.5 | $31,500.00 |
Drop-in alternatives for H5ANAG8NBJR-PBC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
H5ANAG8NCJR
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
H5AN8G8NCJR-PBC
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →H5AN8G8NAFR-PBC
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View Datasheet →MT40A2G8AG-062E
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View Datasheet →MT40A1G8AG-062E
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View Datasheet →K4A8G085WB-BCPB
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View Datasheet →H5ANAG8NBJR-PBC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) |
| Organization | x8 |
| Supply Voltage (VDD) | 1.2 V |
| Speed Grade / Data Rate | PBC suffix, DDR4-2666 class |
| Package | FBGA-78 (7.5 mm x 11 mm) |
| Mounting Type | Surface Mount |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | 8n |
| Interface Type | Parallel, SSTL12 |
| Refresh | Self refresh, 1x/2x/4x refresh modes |
| Die Revision | BJR |
| RoHS Status | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
H5ANAG8NBJR-PBC [data_needed: standard quantity] Pin Configuration Guide
Complete pinout information for H5ANAG8NBJR-PBC ([data_needed: standard quantity] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: standard quantity] package pinout diagram for H5ANAG8NBJR-PBC](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for H5ANAG8NBJR-PBC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5ANAG8NBJR-PBC is suitable for 6 applications: Desktop and Notebook Memory Modules, Server RDIMM and ECC Memory Subsystems, Embedded Industrial Controllers, Networking and Telecom Line Cards, Consumer Electronics and Smart Displays, Test, Measurement and FPGA Platforms.
Desktop and Notebook Memory Modules
The H5ANAG8NBJR-PBC provides 2 GB of DDR4 memory per x8 device, making it efficient for UDIMM and SODIMM construction where eight x8 devices yield a 16 GB unbuffered module. Its DDR4-2666-class speed and bank-group architecture sustain mainstream platform bandwidth, while the 1.2 V supply keeps module power within JEDEC module thermal envelopes. Placed in a standard fly-by command/address topology with ODT and VTT termination, the part trains reliably with common desktop memory controllers; designers should confirm the speed suffix in BIOS training tables since B-die and C-die revisions can carry different supported latency bins.
Recommended
Server RDIMM and ECC Memory Subsystems
With 16Gb density, x8 organization, and DDR4-2666-class bandwidth, the H5ANAG8NBJR-PBC fits server RDIMM and ECC-DIMM designs where x8 devices enable single-bit-error correction with standard SECDED ECC. Its 16-bank, 4-bank-group architecture with 8n prefetch sustains the sequential throughput database and virtualization workloads demand, while the 1.2 V rail reduces per-module power in dense chassis. The device supports 1x/2x/4x refresh modes, letting the register/controller trade thermal refresh rate against performance in high-temperature server airflow conditions. Verify registered-clock buffering and address parity circuitry are placed between the controller and this DRAM per module design rules.
Recommended
Embedded Industrial Controllers
Industrial x86 and ARM boards with DDR4 memory controllers use the H5ANAG8NBJR-PBC to reach multiple gigabytes of working memory within a compact ball-grid footprint. The 1.2 V SSTL12 interface matches low-power embedded SoC memory controllers, and self-refresh retains memory content during deep-sleep states important in battery-backed or always-on industrial nodes. Each device contributes 2 GB, so a single x8 channel populated with two or four devices reaches 4-8 GB without complex stacking. Designers should follow fly-by routing with VTT termination and validate the controller's speed-bin table against the -PBC rating; wide ambient swings demand checking refresh requirements at temperature.
Recommended
Networking and Telecom Line Cards
Switch, router, and 5G baseband line cards buffer high-rate packet streams in DRAM, and the H5ANAG8NBJR-PBC supplies 2 GB per device at DDR4-2666-class bandwidth for this role. Bank-group interleaving sustains the random-access patterns typical of packet buffering, while on-die termination keeps signal integrity intact on long, multi-drop line-card traces. The FBGA-78 footprint allows dense placement alongside network processors and switch ASICs. Thermal design matters in convection-coled telecom racks - use ground-plane copper spreading under the package and derate the effective data rate if ambient exceeds the component's operating range; confirm the exact range on the manufacturer datasheet.
Recommended
Consumer Electronics and Smart Displays
Smart TVs, set-top boxes, and digital-media SoCs rely on DDR4 main memory for frame buffering and application execution, and the H5ANAG8NBJR-PBC provides 2 GB per x8 device at low 1.2 V power. Its self-refresh mode supports low standby power between viewing sessions, and the compact 7.5 mm x 11 mm FBGA-78 footprint fits the tight board real estate of thin consumer enclosures. The DDR4-2666-class rate covers 4K video decode bandwidth requirements of mainstream media SoCs. Consumer designers should verify SoC memory-controller support for the -PBC speed bin and apply controlled-impedance routing on byte lanes to pass signal-integrity validation in cost-sensitive four-layer boards.
Recommended
Test, Measurement and FPGA Platforms
FPGA development boards, logic analyzers, and arbitrary-waveform instruments use DDR4 components like the H5ANAG8NBJR-PBC as deep capture and data-logging memory. Its 16Gb density extends record length in instrument designs, while the x8 organization aligns naturally with 8-bit-wide FPGA memory-controller PHYs from Xilinx and Intel ecosystems. DDR4-2666-class bandwidth supports sustained streaming into the array, and bank-group architecture reduces turnaround stalls in burst-capture scenarios. Designers must honor FPGA calibration routines (write leveling, read training) and manage ODT settings per the controller guidelines; a solid VTT plane and per-byte-lane length matching are essential for reliable operation at full rate.
Recommended
Recommended Products Summary
Engineering reference data for H5ANAG8NBJR-PBC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5ANAG8NCJR | H5AN8G8NCJR-PBC | H5AN8G8NAFR-PBC | MT40A2G8AG-062E | K4A8G085WB-BCPB |
|---|---|---|---|---|---|---|
| Package | FBGA-78 (7.5 mm x 11 mm) | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics |
| Density | 16 Gbit (2 GB) | 16 Gbit | 8 Gbit | 8 Gbit | 16 Gbit | 8 Gbit |
| Organization | x8 | x8 | x8 | x8 | x8 | x8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate Class | DDR4-2666 class (-PBC) | Per suffix (verify) | DDR4-2666 class | DDR4-2666 class | DDR4-2666 (-062E) | DDR4-2666 class |
| Bank / Bank-Group Architecture | 16 banks / 4 bank groups (DDR4 standard) | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups |
| Density Match vs Target | Reference (100%) | 100% - identical 16Gb | 50% - 8Gb | 50% - 8Gb | 100% - identical 16Gb | 50% - 8Gb |
Key Differentiators
- Double the density per device versus 8Gb DDR4 peers (vs H5AN8G8NCJR-PBC)
- Cross-brand second source at identical density and footprint (vs MT40A2G8AG-062E)
- Mainstream -PBC speed bin coverage (vs H5AN8G8NAFR-PBC)
Design Notes
DDR4 fly-by topology: route command/address/clock in a fly-by chain to each FBGA-78 package, terminating at VTT with 40-ohm-class resistors near the last device. Length-match each byte lane's data strobe to its data lines within skew budgets per the DDR4 board design guide. Keep VREFCA and VREFDQ planes quiet with local decoupling; VREFDQ for DRAM and controller should be generated separately to avoid coupling. This topology applies equally to H5ANAG8NBJR-PBC and its FBGA-78 drop-ins from Micron and Samsung.
Decouple each VDD and VDDQ ball pair with at least one 0.1 uF ceramic immediately adjacent to the package, plus bulk 10 uF per device on the 1.2 V rail. VPP (2.5 V) pumps the word-line drivers - keep its rail well regulated, as droop shows up as refresh-margin failures rather than immediate functional errors. Estimated: an 8-device DDR4 module can draw several amps of peak VDDQ current during simultaneous bank-group activation, so size the VRM and plane copper accordingly rather than using average-current numbers.
DDR4 DRAM dissipates heat primarily through the ball field into the PCB. Provide at least 4-6 thermal vias per package site to a solid internal ground/power plane, and consider aluminum module heat spreaders in server RDIMM designs. If operating above the standard refresh temperature threshold, the memory controller switches to higher refresh rates (2x/4x), which costs effective bandwidth; verify derating behavior in your controller firmware and confirm the device's exact operating-temperature range on the manufacturer datasheet for your specific die revision.
Compliance Information
Hynix family datasheet states Lead-Free & Halogen-Free (RoHS Compliant) for the H5AN-series DDR4 SDRAM. REACH SVHC status and conflict-minerals declarations not found in verified data.
