Micron Technology

MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron

MPN: MT40A512M16AD-062E ✓ Active
In Stock Ships in 1-3 business days
[DATA_NEEDED: core supply voltage (VDD)] Vdss 96-FBGA (7.5 mm x 13.5 mm) Package 1.6 GHz Speed DDR4 SDRAM Memory
From $9.2 USD / Unit
MOQ: 1 |
Price updated: 2026-09-01
Volume Pricing
Qty Unit Price Extended
1 $12.24 $12.24
10 $11.5 $115.00
100 $10.8 $1,080.00
500 $9.9 $4,950.00
1,000 $9.2 $9,200.00
ℹ️ All prices are in USD

Drop-in alternatives for MT40A512M16AD-062E — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

MT40A512M16LY-062E AUT:E

✅ Drop-In
📦 96-FBGA
alternate die revision (LY vs AD), same 8Gbit x16 organization and -062E speed grade, pin-to-pin

📋 Reference alternative (not in catalog)

MT40A512M16TB-062E:R

✅ Drop-In
Micron Technology
📦 96-FBGA
DDR4 SDRAM · 8 Gbit (512M x 16) · 3200 MT/s · 1600 MHz · 22 · 1.2V ±60mV · 2.5V (-125mV, +250mV) · 0°C to +95°C

✓ In Stock

$60 / Unit

View Datasheet →

MT40A512M16TD-062E AAT:R

✅ Drop-In
📦 96-FBGA
TD die revision, same 8Gbit 1.6 GHz 19 ns specs and 96-FBGA package per DigiKey listing

📋 Reference alternative (not in catalog)

MT40A512M16LY-062E AIT:E

✅ Drop-In
📦 96-FBGA
industrial-temp AIT:E variant of same family, same density/organization/package, different temperature grade

📋 Reference alternative (not in catalog)

K4A8G165WG-BCWE

✅ Drop-In
Samsung Electro-Mechanics
📦 96-FBGA
DDR4 SDRAM · 8 Gbit · 512M x 16 · 3200 Mbps · 1.2 V · 0°C to +85°C · 20 mA · FBGA-96

✓ In Stock

$44.5 / Unit

View Datasheet →

NT5AD512M16C4-JRU

✅ Drop-In
Nanya Technology
📦 96-FBGA
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz (3200 Mbps data rate) · 22 at 1600 MHz · 1.2 V · 96-ball FBGA (PBGA96) · -40 C to +95 C (industrial grade)

✓ In Stock

$83 / Unit

View Datasheet →

MT40A512M16AD-062E Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Memory Size 8 Gbit
Organization 512M x 16
Clock Frequency 1.6 GHz
Access Time (Row Cycle) 19 ns
Interface Parallel (POD)
Package 96-FBGA (7.5 mm x 13.5 mm)
Mounting Type Surface Mount
Automotive Qualification AUT:E (automotive variant)
Speed Grade -062E
Prefetch Architecture 8n with bank groups
HS Code (USHTS) 8542320071

MT40A512M16AD-062E 96-fbga (7.5 mm x 13.5 mm) Pin Configuration Guide

Complete pinout information for MT40A512M16AD-062E (96-fbga (7.5 mm x 13.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

96-fbga (7.5 mm x 13.5 mm) package pinout diagram for MT40A512M16AD-062E

No detailed pinout data available for MT40A512M16AD-062E.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for MT40A512M16AD-062E Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

MT40A512M16AD-062E is suitable for 6 applications: Automotive Infotainment Memory, ADAS Sensor Processing, Industrial HMI and Vision Systems, FPGA Data Acquisition and Processing, Networking Line Cards, Medical Imaging Buffers.

🚗

Automotive Infotainment Memory

The MT40A512M16AD-062E AUT:E is purpose-built for automotive infotainment platforms where Micron's AUT-qualified DDR4 delivers the traceability and reliability in-vehicle systems demand. The 8 Gbit density per component provides 1 GB of volatile working memory for graphics frame buffers, navigation map data, and application workloads, while the x16 organization halves bus component count versus x8 designs. Running at up to 3200 MT/s, one component supplies the bandwidth headroom that 3D navigation rendering and 1080p video decoding require. Placed on the SoC DDR4 controller bus with fly-by routing and ODT enabled, it sustains high throughput across the automotive temperature environment specified in the Micron AUT:E datasheet.

🎥

ADAS Sensor Processing

Advanced driver assistance systems accumulate camera, radar, and LiDAR data that must be buffered at line rate before fusion processing. The MT40A512M16AD-062E fits this role because its 1.6 GHz clock (3200 MT/s) and 512M x16 organization supply multi-GB/s bandwidth in a single 96-FBGA component, reducing BOM and layout complexity versus multiple x8 parts. The POD I/O structure limits I/O power at speed, important for thermal management in sealed ADAS controller enclosures. Designers typically attach the DDR4 bus to the ADAS SoC with length-matched fly-by traces and enable the programmable strobe preamble to preserve eye margin at full data rate across automotive temperature ranges.

🏭

Industrial HMI and Vision Systems

Industrial human-machine interfaces and machine-vision controllers need high-bandwidth frame buffers with long-lifecycle sourcing. The MT40A512M16AD-062E provides 8 Gbit per component at DDR4-3200 class speeds, enough for dual 1080p display frame buffers or streaming image preprocessing pipelines. The 96-FBGA (7.5 mm x 13.5 mm) footprint fits dense controller boards, and the x16 bus keeps the processor interface simple. Industrial designs not requiring automotive traceability can also substitute the MT40A512M16LY-062E AIT:E industrial variant or Nanya NT5AD512M16C4-JRU on the same footprint for second-sourcing, protecting against DDR4 allocation cycles.

🔧

FPGA Data Acquisition and Processing

High-speed data acquisition cards use the MT40A512M16AD-062E as streaming capture memory behind FPGA DDR4 hard controllers. A single x16 component avoids the pin congestion of x8 pairs and its 8 Gbit depth stores seconds of high-rate ADC samples. At a conservative 2400 MT/s implementation, timing closure is straightforward, while the -062E grade preserves the option to push to 3200 MT/s for higher capture bandwidth. The programmable data strobe preambles improve read margin, and FPGA memory calibration handles training automatically. The JEDEC-standard ballout also lets designers dual-source with Samsung K4A8G165WG-BCWE or Micron TB revisions without layout change.

🌐

Networking Line Cards

Switch and router line cards use DDR4 for packet buffering, flow tables, and deep-packet-inspection scratch memory. The MT40A512M16AD-062E supplies 8 Gbit at 3200 MT/s per component; multiple x16 devices on a memory controller give predictable low-latency buffering that co-processor-based designs cannot match for cost. The 19 ns row cycle time bounds worst-case random-access latency, which matters for QoS-sensitive queue management. Networking designs frequently second-source across vendors; the same JEDEC 96-FBGA footprint accepts Samsung and Nanya equivalents, and Micron's LY/TB/TD die revisions provide supply-chain continuity for long-deployment telecom programs.

💊

Medical Imaging Buffers

Ultrasound and digital radiography systems stream high-resolution image frames into buffer memory before beam-forming or reconstruction. The MT40A512M16AD-062E delivers the 8 Gbit density and DDR4 bandwidth needed for uninterrupted frame capture at 60 fps or higher, and its AUT-grade silicon processes provide conservative reliability margins appreciated in medical equipment qualification. The x16 interface simplifies connection to imaging SoCs and FPGAs, and 96-FBGA rework capability supports field service. Designs can run below the maximum 3200 MT/s rate to widen timing margins, since the -062E grade at reduced clock retains full density benefits with relaxed signal-integrity constraints.

What is the MT40A512M16AD-062E and what are its key specifications?
The MT40A512M16AD-062E AUT:E is a Micron 8 Gbit DDR4 SDRAM organized as 512M x16, operating at 1.6 GHz clock (up to 3200 MT/s) with 19 ns cycle time, in a 96-ball FBGA package of 7.5 mm x 13.5 mm. According to the Micron product page and DigiKey listing, it uses a POD parallel interface with programmable data strobe preambles, and belongs to Micron's automotive (AUT:E) DDR4 family for embedded and vehicle applications.
What is the price of MT40A512M16AD-062E?
As of 2026-09-02, LCSC lists the MT40A512M16AD-062E AUT:E from $12.2374 per unit in stock, and Octopart compares bulk pricing across 3 distributors. Typical quantity-break pricing on this page is $12.24 at qty 1 down to $9.20 at qty 1000. For high-volume automotive programs, request an RFQ because automotive-qualified (AUT) DDR4 pricing varies significantly with allocation and contract terms.
Where to buy MT40A512M16AD-062E online?
The MT40A512M16AD-062E AUT:E is available from authorized distributors including DigiKey (TR and tray versions), Mouser, and LCSC, all showing in-stock inventory as of 2026-09-02. XAIPART also offers this part with quote-based ordering for production quantities. Always purchase through authorized channels for automotive-grade memory, since AUT variants carry traceability requirements that gray-market stock cannot guarantee.
What is the difference between MT40A512M16AD-062E and MT40A512M16LY-062E?
Both are Micron 8 Gbit DDR4 SDRAMs in the same 96-ball FBGA package with identical organization (512M x16) and -062E speed grade. The AD suffix denotes the standard automotive variant die/revision while LY denotes an alternate product revision within the same family; per Micron part catalog both are pin-compatible. Confirm die revision compatibility with your memory controller firmware before swapping, as DDR4 training settings can differ slightly between revisions.
Is MT40A512M16TB-062E:R a drop-in replacement for MT40A512M16AD-062E?
Yes, the MT40A512M16TB-062E:R is listed by Octopart as an equivalent: IC DRAM 8 Gbit parallel in 96-FBGA from Micron Technology, with the same package and organization. The TB variant differs in die/process revision (a Micron node migration). Because both use the same JEDEC DDR4 x16 ballout, it is board-level drop-in, but re-verify memory training and timing margin in your target system after substitution.
What is the best Samsung equivalent for MT40A512M16AD-062E?
The best Samsung cross-brand equivalent is the K4A8G165WG-BCWE, an 8 Gbit DDR4 SDRAM in x16 organization in a 96-ball FBGA package, matching the MT40A512M16AD-062E in density, width, and footprint. According to distributor cross-reference data, Samsung K4A8G-series DDR4 parts are commonly used as second sources for Micron MT40A512M16 designs. Verify the BC speed grade against your -062E (3200 MT/s) timing requirements and re-run memory training.
Can NT5AD512M16C4-JRU replace MT40A512M16AD-062E?
Yes, the Nanya NT5AD512M16C4-JRU is an 8 Gbit DDR4 SDRAM with x16 organization in the same 96-ball FBGA footprint, making it a board-level drop-in candidate for the MT40A512M16AD-062E. The -JR speed grade supports comparable DDR4 data rates. However, note the Nanya part is not automotive-qualified like the Micron AUT:E variant, so it suits industrial and consumer designs but may not satisfy automotive AEC traceability requirements.
Is the MT40A512M16AD-062E suitable for automotive applications?
Yes. The AUT:E suffix identifies this as a Micron automotive-grade DDR4 SDRAM variant intended for automotive environments such as infotainment, cluster, and ADAS platforms. DigiKey lists the AUT:E and AUT:E TR versions specifically for automotive buyers, and Micron maintains a dedicated part-detail page for the MT40A512M16AD-062E-AUT-E. Confirm the exact temperature grade and qualification level (per the latest Micron datasheet) against your program requirements before design-in.
Where to download the MT40A512M16AD-062E datasheet PDF?
Download the MT40A512M16 datasheet PDF from Micron's official part-detail page at micron.com for the MT40A512M16AD-062E AUT:E, which links the current revision. The full family datasheet (MT40A512M16) is a 373-page document available from Micron and mirror sites such as alldatasheet.com. Always use the Micron official download, as automotive parts require revision-controlled documentation for PPAP submissions.
Where can I find the pinout / ball map of MT40A512M16AD-062E?
The complete 96-ball FBGA ball map for the MT40A512M16AD-062E is in the MT40A512M16 family datasheet's ballout section on Micron's website. The device follows the standard JEDEC DDR4 x16 ballout: DQ0-DQ15, DQS/DQS# strobe pair, DM data mask, differential clock CK/CK#, RAS#, CAS#, WE#, bank group and bank addresses, row/column address, and power/ground balls. This page does not reproduce the full 96-ball table to avoid transcription errors - consult the official datasheet.
MT40A512M16AD-062E vs MT40A512M16TD-062E AAT:R - which is better?
For new designs needing current-generation silicon, the MT40A512M16TD-062E AAT:R is the newer Micron die revision in the same 8 Gbit x16 96-FBGA format and is listed by DigiKey at 1.6 GHz / 19 ns like the AD part. For existing boards validated on the AD revision, staying with MT40A512M16AD-062E avoids re-qualification. Both are pin-compatible; the choice depends on lifecycle strategy - TD is the forward-lifecycle option, AD suits existing validated designs.
When should I choose MT40A512M16AD-062E over an LPDDR4 alternative?
Choose the MT40A512M16AD-062E (DDR4) when your processor or FPGA has a discrete DDR4 controller, you need board-level memory sourcing flexibility, and power budget allows the ~1.2 V DDR4 interface. Choose LPDDR4 only for battery-powered designs needing lower standby power and soldered-down density. DDR4 x16 components like this 8 Gbit part offer superior second-source availability (Samsung, Nanya, Alliance equivalents) and easier BGA rework compared with stacked package-on-package LPDRAM.
Is MT40A512M16AD-062E in stock and what is the lead time?
Yes, as of 2026-09-02 the MT40A512M16AD-062E AUT:E is in stock at LCSC (price from $12.2374) and ships same-day from DigiKey, which lists both the tray and TR (tape and reel) versions. Distributor stock levels fluctuate for automotive memory; for guaranteed delivery on production volumes, place scheduled orders or request lead-time quotes from XAIPART, as DDR4 automotive allocation can extend lead times during supply constraints.
What are the design considerations for DDR4 routing with MT40A512M16AD-062E?
Route the DDR4 interface with fly-by command/address topology with series termination to VTT, length-match DQ byte lanes to the DQS strobe within tight skew windows, and implement on-die termination (ODT) settings per the Micron datasheet. Use solid power planes with decoupling on VDD and VTT rails. The programmable data strobe preambles feature of this device helps signal integrity at 3200 MT/s; enable write preamble per controller calibration results.
Can MT40A512M16AD-062E be used with FPGAs?
Yes, the 8 Gbit x16 organization and 96-FBGA package make this part a common choice for FPGA memory interfaces in vision, industrial, and automotive designs. Hard DDR4 memory controllers in FPGAs support the -062E 3200 MT/s speed grade, though many FPGA designs run it at reduced rates such as 2400 MT/s to relax timing. The single x16 component approach uses fewer data lanes than x8 dual-component layouts, simplifying pin-constrained FPGA designs.

Engineering reference data for MT40A512M16AD-062E — comparison, design guidance, and compliance information.

Selection Guide

Choose the MT40A512M16AD-062E AUT:E when your program requires automotive-qualified DDR4 with 8 Gbit x16 organization - it is Micron's purpose-built automotive option on the JEDEC 96-FBGA footprint. For existing non-automotive boards, the MT40A512M16TB-062E:R offers the same 8 Gbit x16 with roughly half the unit price ($6.20 vs $12.24) but standard-grade silicon. The MT40A512M16TD-062E AAT:R suits automotive designs preferring the newer die revision with automotive AAT grade. Cross-brand, the Samsung K4A8G165WG-BCWE is the strongest second source on the same JEDEC ballout for consumer/industrial designs, while the Nanya NT5AD512M16C4-JRU adds a third source at consumer grade. For battery-powered portable products, consider LPDDR4 (e.g., MT53B128M32D1DS-062) instead - lower power but a different controller interface and package. Always re-run DDR4 training after any die-revision or vendor substitution.

Comparison with Alternatives

Parameter This Product MT40A512M16LY-062E AUT:E MT40A512M16TB-062E:R MT40A512M16TD-062E AAT:R K4A8G165WG-BCWE NT5AD512M16C4-JRU
Package 96-FBGA (7.5 x 13.5 mm) 96-FBGA - same 96-FBGA - same 96-FBGA (7.5x13) - same footprint 96-FBGA - same JEDEC ballout 96-FBGA - same footprint
Brand Micron Technology Micron Technology Micron Technology Micron Technology Samsung Electronics Nanya Technology
Memory Size 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit
Organization 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16
Clock / Data Rate 1.6 GHz (-062E, up to 3200 MT/s) 1.6 GHz (-062E) 1.6 GHz (-062E) 1.6 GHz (-062E) [DATA_NEEDED] (BC grade, DDR4-3200 class) [DATA_NEEDED] (-JR grade)
Cycle Time 19 ns 19 ns 19 ns 19 ns [DATA_NEEDED] [DATA_NEEDED]
Automotive Grade Yes (AUT:E) Yes (AUT:E) No (standard :R) Yes (AAT automotive :R) No (standard grade) No (consumer/industrial)
Unit Price (qty 1, as of 2026-09-02) $12.24 (LCSC $12.2374) $11.64 (Octopart) $6.20 (Octopart) [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Automotive-qualified AUT:E variant (vs K4A8G165WG-BCWE)
  • Lower-cost newer die revision available on same footprint (vs MT40A512M16TB-062E:R)
  • Forward-lifecycle continuity within Micron family (vs MT40A512M16LY-062E AUT:E)

Design Notes

Route DQ[15:0] as a single byte lane length-matched to DQS/DQS# within the skew window required by the DDR4 controller (typically +/-25 mil at 3200 MT/s). Use fly-by topology for CK, CA, and CS with series termination toward VTT. Enable the MT40A512M16AD-062E programmable data strobe preamble during write calibration to widen eye margin at full 3200 MT/s operation. Refer to Micron DDR4 design guidelines in the MT40A512M16 datasheet signal-integrity section.

DDR4 uses separate VDD (core), VDDQ (I/O, POD12), and VPP rails - decouple each pin pair with 100 nF ceramics plus bulk capacitance near the 96-FBGA. Generate VTT termination with a dedicated sink/source LDO capable of bidirectional current. Estimated: at 3200 MT/s with x16 POD I/O, VDDQ transient currents can exceed 0.5 A per device; budget the VTT rail for the total DRAM population and verify plane droop in simulation.

The 96-ball FBGA requires via-in-pad or dog-bone fanout on a minimum 6-layer stack with solid reference planes. Place the component within 50 mm of the controller when possible; for multi-rank or multi-device buses follow the fly-by length rules in Micron's DDR4 layout application note. Escape DQ balls on inner layers to keep top-layer stubs under 30 mil, preserving SI at 1.6 GHz operation.

Do not interchange die revisions (AD vs LY/TB/TD) in a validated system without re-running memory training - DDR4 calibration can shift across Micron node migrations even on pin-compatible parts. Automotive buyers must confirm the AUT:E temperature grade and PPAP documentation with Micron before design freeze. Standard (non-AUT) second sources like Samsung K4A8G165WG-BCWE fit the same footprint but lack automotive qualification.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

Compliance declarations are not included in the provided web data. AUT:E suffix indicates Micron automotive-qualified variant; obtain RoHS/REACH certificates from Micron product page for PPAP submissions.

Data verified on: 2026-09-02 — data verified and curated by XAIPART's component engineering team

Related Searches

MT40A512M16AD-062E datasheet MT40A512M16AD-062E AUT:E price Micron MT40A512M16AD-062E 8Gbit DDR4 MT40A512M16AD-062E vs MT40A512M16LY-062E MT40A512M16AD-062E drop-in replacement 8Gbit DDR4 x16 96-FBGA automotive SDRAM MT40A512M16AD-062E pinout ball map automotive DDR4 SDRAM ADAS memory Samsung equivalent MT40A512M16AD-062E buy MT40A512M16AD-062E in stock what is DDR4 -062E speed grade Micron DDR4 3200 MT/s x16 FPGA memory

Related Components & Terms

Micron Technology MT40A512M16AD-062E MT40A512M16LY-062E MT40A512M16TB-062E:R MT40A512M16TD-062E AAT:R K4A8G165WG-BCWE NT5AD512M16C4-JRU DDR4 SDRAM DRAM synchronous DRAM 96-FBGA TFBGA POD (pseudo-open drain) 3200 MT/s AUT:E automotive grade on-die termination (ODT) fly-by topology ADAS automotive infotainment FPGA memory interface data strobe preamble
Quick Quote RFQ
Fill in complete details — our sales team will respond within 24 hours
Part Number Manufacturer Package QTY Target Price Extended
Total: $0.00 USD
Quote submitted!

We will respond to your email within 24 hours

1
RFQ Submitted
2
Quote Received
3
Order Placed
4
Payment
5
Shipped
6
Delivered
View RFQ Details