MT40A512M16JY-075E vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of MT40A512M16JY-075E by Micron Technology and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ ActiveSpecification Comparison
| Parameter | MT40A512M16JY-075E | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | — |
| Organization | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| Data Rate | 2666 MT/s | 2666 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Interface | Parallel | DDR4 (parallel, double data rate) |
| Package | 96-FBGA (8x14) | 96FBGA |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Operating Temperature Range | 0°C to +95°C (TC) | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| RoHS Status | Compliant | Compliant (per JLCPCB listing: ROHS) |
| Features | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Temperature | — | 0C to +85C |
| Die Generation | — | B-die |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |