MT40A512M16JY-075E vs K4A8G165WB-BCTD Perbandingan
Perbandingan bersamaan detil MT40A512M16JY-075E dari Micron Technology dan K4A8G165WB-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MT40A512M16JY-075E | K4A8G165WB-BCTD |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| Laju Data | 2666 MT/s | 2666 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Antarmuka | Parallel | DDR4 (parallel, double data rate) |
| Paket | 96-FBGA (8x14) | 96FBGA |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Rentang Suhu Kerja | 0°C to +95°C (TC) | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| Status RoHS | Compliant | Compliant (per JLCPCB listing: ROHS) |
| Fitur | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Suhu Kerja | — | 0C to +85C |
| Die Generation | — | B-die |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |