MT40A512M16JY-075E vs K4A8G165WB-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16JY-075E disebabkan oleh Micron Technology dan K4A8G165WB-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifPengandingan Spesifikasi
| Parametr | MT40A512M16JY-075E | K4A8G165WB-BCTD |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| Kadar Data | 2666 MT/s | 2666 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Antaramuka | Parallel | DDR4 (parallel, double data rate) |
| Kemasan | 96-FBGA (8x14) | 96FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA) |
| Gambaran Suhu Operasi | 0°C to +95°C (TC) | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| Status RoHS | Compliant | Compliant (per JLCPCB listing: ROHS) |
| Ciri-ciri | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Suhu Operasi | — | 0C to +85C |
| Die Generation | — | B-die |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |