MT40A512M16TB-062E:R vs AS4C512M16D4B-62BCNTR Comparison

Detailed side-by-side comparison of MT40A512M16TB-062E:R by Micron Technology and AS4C512M16D4B-62BCNTR by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16TB-062E:R MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R ✓ Active
Alliance Memory
AS4C512M16D4B-62BCNTR AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4B-62BCNTR ✓ Active

Specification Comparison

Parameter MT40A512M16TB-062E:R AS4C512M16D4B-62BCNTR
Brand Micron Technology Alliance Memory
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $60.00 $8.10
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit (512M x 16) 8 Gbit (512M x 16)
Data Rate 3200 MT/s 3200 MT/s
Clock Frequency 1600 MHz 1600 MHz
CAS Latency 22 19 ns
Supply Voltage (VDD/VDDQ) 1.2V ±60mV —
VPP Voltage 2.5V (-125mV, +250mV) —
Operating Temperature 0°C to +95°C 0°C to 95°C
Package 96-FBGA (7.5x13 mm) 96-FBGA (7.5x13 mm)
Interface Parallel Parallel
Data Bus Width 16 bits —
Refresh Time 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) —
I/O Type 1.2V pseudo open-drain —
Features Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration —
RoHS Status Compliant Compliant
Supply Voltage — 1.2 V (1.14V to 1.26V)
Mounting Type — Surface Mount
JEDEC Standard — Compliant
Organization — 512M x 16
Revision — Rev.B
Lead-Free — Yes

Datasheets & Resources

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