MT40A512M8SA-062E - 4Gb DDR4 SDRAM x8, 3200 | Micron
MPN: MT40A512M8SA-062E β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.85 | $6.85 |
| 10 | $6.35 | $63.50 |
| 100 | $5.95 | $595.00 |
| 500 | $5.65 | $2,825.00 |
| 1,000 | $5.35 | $5,350.00 |
Drop-in alternatives for MT40A512M8SA-062E β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT40A512M8SA-062E IT:F
β Drop-Inπ Reference alternative (not in catalog)
MT40A512M8SA-062E AAT:F
β Drop-Inπ Reference alternative (not in catalog)
MT40A512M8SA-062E AIT:F
β Drop-Inπ Reference alternative (not in catalog)
MT40A512M8SA-062E AUT:F
β Drop-Inπ Reference alternative (not in catalog)
MT40A512M8SA-062E:G
β Drop-Inπ Reference alternative (not in catalog)
MT40A512M8SA-075:F
β Drop-Inπ Reference alternative (not in catalog)
K4A4G085WE-BCRC
β Drop-Inβ In Stock
$1.36 / Unit
View Datasheet βNT5AD512M16C4-JRU
β Drop-Inβ In Stock
$83 / Unit
View Datasheet βMT40A512M8SA-062E Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 4 Gbit |
| Organization | 512M x 8 |
| Clock Frequency | 1.6 GHz |
| Data Rate | 3200 MT/s (DDR4-3200 class) |
| Access Time | 13.75 ns |
| Write Cycle Time | 15 ns |
| VDD / VDDQ | 1.2 V +/-60 mV |
| VPP Supply | 2.5 V (-125 mV / +250 mV) |
| Interface | Parallel, 1.2 V pseudo open-drain I/O |
| VREFDQ | On-die internal adjustable generation |
| Package | 78-FBGA (7.5 x 11 mm), Z10B |
| Mounting Type | Surface Mount |
| Operating Temperature (TC max) | up to 95 degrees C |
| Package Flow | :F (lead-free / RoHS) |
| Mounting Style | SMD/SMT |
MT40A512M8SA-062E :f (lead-free / rohs) Pin Configuration Guide
Complete pinout information for MT40A512M8SA-062E (:f (lead-free / rohs) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT40A512M8SA-062E.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT40A512M8SA-062E is suitable for 6 applications: Desktop and Notebook Main Memory, Industrial Controllers and Embedded Computing, Automotive Infotainment and Telematics, Networking and Communication Equipment, Replacement Sourcing and BOM Continuity, FPGA and ASSP Data Buffering.
Desktop and Notebook Main Memory
The MT40A512M8SA-062E serves as main system memory in desktop PCs, notebooks, and SODIMM/U DIMM modules, where its 4Gb x8 organization and 3200 MT/s-class data rate align with mainstream DDR4 memory controllers. Populated in multiples on a 64-bit memory bus, eight x8 devices form a standard non-ECC DIMM rank delivering 4 GB per rank. The 1.2V VDD/VDDQ operation reduces memory subsystem power versus DDR3, and the on-die adjustable VREFDQ removes an external reference rail from the module design, simplifying routing on dense 78-ball layouts. At 1.6 GHz clock operation, signal integrity demands length-matched fly-by command/address routing and on-die termination, both natively supported by this DDR4 device.
Recommended
Industrial Controllers and Embedded Computing
Industrial controllers, PLCs, and embedded computing modules use the MT40A512M8SA-062E as volatile working memory where its TC maximum of 95 degrees C covers most enclosure environments. The global datasheet overview specifically targets industrial controllers and computing modules for this DDR4 family. For harsh or thermally extreme deployments, the identical-die IT:F industrial-temperature or AIT:F automotive-industrial variants drop onto the same PCB footprint without redesign. The 4 Gbit capacity suits boot-to-RAM execution of embedded Linux and real-time control stacks, while the 512M x8 organization with pseudo open-drain 1.2V I/O keeps I/O power low in fanless, conduction-cooled systems.
Recommended
Automotive Infotainment and Telematics
Automotive infotainment, digital cockpit, and telematics platforms require DDR4 DRAM qualified for elevated temperature and automotive flows. The Micron AUT:F, AAT:F, and AIT:F grade variants of this same 4Gb x8 die provide AEC-flow traceability while preserving the identical 78-FBGA footprint, allowing one PCB design to span consumer and automotive builds. In infotainment SoC designs the -062E speed bin supplies the bandwidth needed for graphics frame buffers and navigation map buffering, with the 2.5V VPP rail and on-die VREFDQ simplifying the power tree in space-constrained modules. DigiKey lists the AIT:F variant in stock for same-day shipment as of 2026-09-02.
Recommended
Networking and Communication Equipment
Routers, switches, and network-attached processing cards use the MT40A512M8SA-062E for packet buffering, routing tables, and control-plane memory. The 3200 MT/s-class interface provides the sustained bandwidth required by gigabit-class network processors, while the x8 organization allows designers to scale bus width in 8-bit increments to match controller data paths. Network equipment often operates in closed racks approaching the 95 degrees C TC limit, making airflow or thermal-spreader design important; the AIT:F variant extends environmental margin where required. The 78-FBGA package supports dense memory clusters around SoCs on 6-8 layer PCBs typical of network line cards.
Recommended
Replacement Sourcing and BOM Continuity
The MT40A512M8SA-062E is widely used as a replacement-sourcing component: the Micron product overview explicitly lists replacement sourcing among its target uses, and Octopart tracks 19 distributors stocking the :F variant. When an original DDR4 DRAM becomes allocation-constrained, this 4Gb x8 part substitutes for JEDEC-compatible 78-FBGA DDR4 devices, with the IT:F/AAT:F/AIT:F temperature variants and Samsung K4A4G085WE-BCRC providing same-footprint alternates. Buyers should as of 2026-09-02 expect pricing near $5.95-$6.85 in unit quantities. Always verify the memory controller's supported vendor SPD entries before qualifying a substitution in field-repair inventories.
Recommended
FPGA and ASSP Data Buffering
FPGA-based designs - data acquisition, image processing, and test instrumentation - attach DDR4 SDRAM such as the MT40A512M8SA-062E via hardened memory controllers for high-throughput buffering. The -062E speed bin supports 3200 MT/s-class interfaces implemented by FPGA memory-controller IP, while the x8 organization with differential DQS strobes simplifies read-capture calibration. The on-die adjustable VREFDQ generation removes one external precision rail from the FPGA board power tree, and the 1.2V pseudo open-drain I/O reduces simultaneous-switching noise on mixed-signal acquisition boards. A single 4Gb device supplies 512 MB of capture-buffer depth, adequate for high-speed ADC streaming applications.
Recommended
Recommended Products Summary
Engineering reference data for MT40A512M8SA-062E β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT40A512M8SA-062E IT:F | MT40A512M8SA-062E AAT:F | MT40A512M8SA-062E AUT:F | MT40A512M8SA-062E:G | MT40A512M8SA-075:F | K4A4G085WE-BCRC |
|---|---|---|---|---|---|---|---|
| Package | 78-FBGA (7.5x11) | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same | 78-FBGA - same | 78-FBGA (7.5x11) - same | 78-FBGA - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Speed Grade | -062E (3200 class, 1.6 GHz) | -062E (3200 class) | -062E (3200 class) | -062E (3200 class) | -062E (:G flow) | -075 (2666 class) | 3200 class |
| Supply Voltage (VDD/VDDQ) | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V |
| Temperature Grade | Commercial (TC max 95 C) | Industrial | Automotive | Automotive | [DATA_NEEDED] | [DATA_NEEDED] | Commercial/Industrial |
| Access Time | 13.75 ns | 13.75 ns | 13.75 ns | 13.75 ns | [DATA_NEEDED] | 15 ns (tCK 0.75 ns class) | [DATA_NEEDED] |
| RoHS / Lead-Free Flow | :F (lead-free) | :F - lead-free | :F - lead-free | :F - lead-free | :G flow | :F - lead-free | RoHS compliant |
Key Differentiators
- Full-speed commercial-grade availability at 3200 MT/s class (vs MT40A512M8SA-075:F)
- Identical-die automotive and industrial variants enable one PCB across markets (vs MT40A512M8SA-062E AUT:F / AIT:F)
- Multi-source flexibility (vs K4A4G085WE-BCRC)
Design Notes
DDR4 x8 routing at -062E speed class requires length-matched data groups: match DQ[7:0], DQS/DQS# and DM within +/-25 mil on standard FR4, and keep command/address in fly-by topology with balanced stubs to each DRAM. The 78-FBGA (7.5 x 11 mm) ballout places DQ balls for short escape routing; use 40-ohm controlled-impedance traces for the data group and reference a solid ground plane. Follow the layout guidance in Micron's 4Gb DDR4 SDRAM datasheet and Micron's DDR4 point-to-point design guides before releasing the stackup.
Provide three rails: VDD and VDDQ at 1.2 V +/-60 mV and VPP at 2.5 V (-125 mV/+250 mV). VPP supplies the word-line charge pump and must be present whenever VDD is applied. Decouple with a network of 0.1 uF and 1 uF ceramics per device plus bulk capacitance per rank; the pseudo open-drain I/O draws current only during low levels, so VDDQ transient sizing can be lighter than DDR3. The on-die adjustable VREFDQ eliminates the external reference rail, reducing regulator count and rail-to-rail tracking requirements.
The device is rated TC maximum to 95 degrees C. Estimated: at moderate DDR4 activity (~0.5 W per device), the FBGA theta-JA of roughly 30-40 C/W on a multi-layer board implies a 15-20 C self-heating rise, so ambient must stay below ~75 C for commercial :F parts. For environments above this, select the IT:F, AAT:F, AIT:F or AUT:F variants, which share the identical footprint and require no PCB change.
Do not mix speed bins blindly: the -075:F variant is DDR4-2666 class and will not close timing at 3200 MT/s controller settings even though it is footprint-identical. Verify the memory controller's vendor compatibility/SPD table before substituting the cross-brand Samsung K4A4G085WE-BCRC, as read-training algorithms can be vendor-sensitive. Confirm the exact :F vs :G package-flow suffix on purchase orders, since the two flows carry different documentation.
Compliance Information
:F package flow denotes Micron lead-free/RoHS-compliant assembly. REACH, halogen-free and conflict-minerals statements not found in provided data. AEC-Q100 applies to the AAT:F/AIT:F/AUT:F automotive variants, not the base :F part.
