MT41K256M16HA-125:E vs H5AN8G6NCJR-XXC Comparison

Detailed side-by-side comparison of MT41K256M16HA-125:E by Micron Technology and H5AN8G6NCJR-xxC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT41K256M16HA-125:E MT41K256M16HA-125:E - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125:E - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125:E ✓ Active
SK hynix
H5AN8G6NCJR-xxC H5AN8G6NCJR-xxC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

H5AN8G6NCJR-xxC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

H5AN8G6NCJR-xxC ✓ Active

Specification Comparison

Parameter MT41K256M16HA-125:E H5AN8G6NCJR-xxC
Brand Micron Technology SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.10 $6.50
Memory Type DDR3L SDRAM DDR4 SDRAM
Density 4 Gbit 8 Gb
Organization 256M x 16 512M x 16
Clock Frequency 800 MHz —
CAS Latency 13.75 ns —
Supply Voltage (VDD) 1.35 V (DDR3L) 1.2 V
Supply Voltage (VDDQ) 1.35 V —
Package 96-FBGA (9x14 mm) 96-ball FBGA
Number of Pins 96 —
Mounting Type Surface Mount Surface Mount
Operating Temperature Range 0°C to +95°C (TC) —
RoHS Status Compliant —
Lead-Free Yes Yes
Data Bus Width 16 bits —
Logic Family CMOS —
Data Rate — 2666 Mbps (VKC speed grade)
VPP Supply — 2.5 V
Operating Temperature (TC) — 0°C to 95°C
Number of Banks — 8
Burst Length — 8, 4 (with burst chop)
On-Die Termination (ODT) — Supported
Self-Refresh — Temperature-compensated (TCSR)
RoHS — Compliant

Datasheets & Resources

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