MT41K256M16HA-15EM:E vs K4B4G1646D-BYK00 Comparison
Detailed side-by-side comparison of MT41K256M16HA-15EM:E by Micron Technology and K4B4G1646D-BYK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16HA-15EM:E ✓ ActiveSamsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16HA-15EM:E | K4B4G1646D-BYK00 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.95 | $7.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.5V compatible) | 1.35 V (also operates at 1.5 V) |
| Data Rate | 1333 Mbps (DDR3L-1333) | 1600 Mbps |
| CAS Latency | 15 | Programmable |
| Package | 96-ball FBGA (9x14mm) | 96-ball TFBGA |
| Mounting Type | Surface Mount | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0°C to 85°C |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | Yes |
| Number of Pins | 96 | — |
| Access Time | 13.75 ns | — |
| Clock Frequency | 800 MHz | — |
| Interface | Parallel | — |
| Number of Terminals | — | 96 |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| RoHS | — | Compliant |
| Halogen Free | — | Yes |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |