MT53E1G32D2FW-046 WT:B vs WT:A Comparison
Detailed side-by-side comparison of MT53E1G32D2FW-046 WT:B by Micron Technology and WT:A by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT53E1G32D2FW-046 WT:B - 32Gb LPDDR4 SDRAM | Micron
MT53E1G32D2FW-046 WT:B ✓ Active
Specification Comparison
| Parameter | MT53E1G32D2FW-046 WT:B | WT:A |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $98.44 | $9.85 |
| Memory Type | Volatile, Mobile LPDDR4 SDRAM (LPDRAM) | Mobile LPDDR4 SDRAM |
| Memory Capacity | 32 Gbit (4 GB) | — |
| Organization | 1G x 32 | 1536M x 32 |
| Interface / Bus Width | Parallel, 32-bit | — |
| Clock Frequency (max) | 2.133 GHz (2133 MHz) | — |
| Data Rate (per pin) | 4266 MT/s | — |
| Clock Access Time (tCK) | 3.5 ns | — |
| Speed Bin | -046 | — |
| Supply Voltage VDD2 | 1.1 V | 1.1 V (typ, JEDEC LPDDR4) |
| Supply Voltage VDDQ | 1.1 V (LPDDR4X) / 1.8 V (LPDDR4) | 1.1 V (typ, JEDEC LPDDR4) |
| Package | 200-ball TFBGA (10 mm x 14.5 mm) | 200-ball TFBGA |
| Operating Temperature | -25C to +85C | [DATA_NEEDED: operating temperature grade] |
| Mounting Type | Surface Mount | Surface Mount |
| Die Configuration | Dual-Die Package (DDP) | — |
| On-Die Features | Auto precharge, Data mask, ZQ calibration, Write leveling, Built-in temperature sensor, Asynchronous reset | — |
| RoHS Status | Compliant | Compliant |
| Density | — | 48 Gbit (6 GB) |
| Maximum Data Rate | — | 2.133 GHz |
| Speed Bin Suffix | — | -046 (2133 MHz) |
| Supply Voltage VDD1 | — | 1.8 V (typ, JEDEC LPDDR4) |
| MSL Level | — | [DATA_NEEDED: MSL level] |
| Interface | — | LPDDR4 command/address + 32-bit DQ |
| JEDEC Standard | — | JESD209-4 (LPDDR4) |
| Refresh | — | Auto-refresh and self-refresh per JEDEC |