MT53E1G32D2FW-046 WT:B vs WT:A 对比

详细并排对比 MT53E1G32D2FW-046 WT:B 出自 Micron Technology 和 WT:A 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT53E1G32D2FW-046 WT:B MT53E1G32D2FW-046 WT:B - 32Gb LPDDR4 SDRAM | Micron

MT53E1G32D2FW-046 WT:B - 32Gb LPDDR4 SDRAM | Micron

MT53E1G32D2FW-046 WT:B ✓ 量产中
Micron Technology
WT:A WT:A - Micron 48Gb LPDDR4 SDRAM Mobile Memory | Micron

WT:A - Micron 48Gb LPDDR4 SDRAM Mobile Memory | Micron

WT:A ✓ 量产中

规格对比

参数 MT53E1G32D2FW-046 WT:B WT:A
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $98.44 $9.85
存储器类型 Volatile, Mobile LPDDR4 SDRAM (LPDRAM) Mobile LPDDR4 SDRAM
Memory Capacity 32 Gbit (4 GB) —
存储组织 1G x 32 1536M x 32
Interface / Bus Width Parallel, 32-bit —
Clock Frequency (max) 2.133 GHz (2133 MHz) —
Data Rate (per pin) 4266 MT/s —
Clock Access Time (tCK) 3.5 ns —
Speed Bin -046 —
Supply Voltage VDD2 1.1 V 1.1 V (typ, JEDEC LPDDR4)
Supply Voltage VDDQ 1.1 V (LPDDR4X) / 1.8 V (LPDDR4) 1.1 V (typ, JEDEC LPDDR4)
封装 200-ball TFBGA (10 mm x 14.5 mm) 200-ball TFBGA
工作温度 -25C to +85C [DATA_NEEDED: operating temperature grade]
安装类型 Surface Mount Surface Mount
Die Configuration Dual-Die Package (DDP) —
On-Die Features Auto precharge, Data mask, ZQ calibration, Write leveling, Built-in temperature sensor, Asynchronous reset —
RoHS 状态 Compliant Compliant
Density — 48 Gbit (6 GB)
Maximum Data Rate — 2.133 GHz
Speed Bin Suffix — -046 (2133 MHz)
Supply Voltage VDD1 — 1.8 V (typ, JEDEC LPDDR4)
MSL 等级 — [DATA_NEEDED: MSL level]
接口 — LPDDR4 command/address + 32-bit DQ
JEDEC Standard — JESD209-4 (LPDDR4)
Refresh — Auto-refresh and self-refresh per JEDEC

数据手册与资源

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