MT53E2G64D8TN-046 vs H58G56AK6QX032N Comparison

Detailed side-by-side comparison of MT53E2G64D8TN-046 by Micron Technology and H58G56AK6QX032N by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT53E2G64D8TN-046 MT53E2G64D8TN-046 - 128Gbit LPDDR4X SDRAM 556-Ball | Micron

MT53E2G64D8TN-046 - 128Gbit LPDDR4X SDRAM 556-Ball | Micron

MT53E2G64D8TN-046 ✓ Active

Specification Comparison

Parameter MT53E2G64D8TN-046 H58G56AK6QX032N
Brand Micron Technology SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $13.40
Memory Type Mobile LPDDR4X SDRAM LPDDR5 SDRAM
Memory Size 128 Gbit (16 GB) —
Organization 2G x 64 512M x 64
Interface Parallel —
Clock Frequency 2.133 GHz —
Access Time 3.5 ns —
Speed Grade -046 (4266 Mbps/pin) —
Supply Voltage (VDD) 1.1 V / 1.8 V (per variant) —
Package 556-ball LFBGA (12.4 mm x 12.4 mm) FBGA-315
Ball Pitch [DATA_NEEDED: ball pitch] —
Mounting Type Surface Mount Surface Mount
Operating Temperature (AAT:C) 0C to +95C —
Operating Temperature (AIT:C) -40C to +95C —
Operating Temperature (AUT:C) -40C to +105C —
Automotive Qualification (AUT variant) AEC-Q100 qualified —
Data Bus Width 64 bit —
Write Cycle Time 18 ns —
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Density — 32Gb (4GB)
Data Rate — 6400 Mbps per pin
Bus Width — x16 (x64 variant per sourcing data)
Core Voltage (VDD) — 0.5 V
I/O Voltage (VDDQ) — 0.5 V
Interface Voltage (VDD2) — 1.8 V / 1.05 V
Grade — Automotive
Applications — Data storage, firmware boot, embedded logging, industrial controllers, computing modules
Standard — JEDEC LPDDR5
Operating Temperature — [DATA_NEEDED: operating temperature range]
Reflow/MSL Rating — [DATA_NEEDED: MSL level]

Datasheets & Resources

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