N25Q016A11EV7A0 vs N25Q032A13EV741 Comparison

Detailed side-by-side comparison of N25Q016A11EV7A0 by Micron Technology and N25Q032A13EV741 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
N25Q016A11EV7A0 N25Q016A11EV7A0 - 16Mbit SPI NOR Flash 108MHz | Micron

N25Q016A11EV7A0 - 16Mbit SPI NOR Flash 108MHz | Micron

N25Q016A11EV7A0 ✓ Active
Micron Technology
N25Q032A13EV741 N25Q032A13EV741 - 32Mb SPI NOR Flash 108MHz | Micron

N25Q032A13EV741 - 32Mb SPI NOR Flash 108MHz | Micron

N25Q032A13EV741 Obsolete

Specification Comparison

Parameter N25Q016A11EV7A0 N25Q032A13EV741
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $2.04
Memory Type FLASH - NOR Memory IC Non-Volatile, FLASH - NOR
Memory Size 16 Mbit (2 MB) 32Mbit (8M x 4)
Interface SPI —
Maximum Clock Frequency 108 MHz 108 MHz
Supply Voltage 1.8 V (V11 grade) 2.7 V to 3.6 V
Package 8-pin WSON (DFN-8 style, EV suffix) 8-lead VDFPN (EV)
Mounting Type Surface Mount Surface Mount
Protocol Support Standard SPI, Dual SPI, Quad SPI —
Programming Page program, sector/block erase —
Family N25Q —
Speed Grade 108 MHz (highest N25Q 16Mbit grade) —
Operating Temperature [DATA_NEEDED: Operating Temperature] —
Erase/Program Cycles [DATA_NEEDED: Endurance] —
Data Retention [DATA_NEEDED: Data Retention] —
Package Dimensions [DATA_NEEDED: Package Dimensions] —
RoHS Status [DATA_NEEDED: RoHS Status] —
Memory Format — FLASH
Memory Interface — SPI
Write Cycle Time - Word — 8 ms
Write Cycle Time - Page — 5 ms
Technology — FLASH - NOR (SLC)
Moisture Sensitivity Level (MSL) — 3 (168 Hours)
Packaging — Bulk
Part Status — Obsolete
Application Segment — Telecom

Datasheets & Resources

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