NT5AD512M16C4-HR vs E3AD8G16A4-HR Comparison
Detailed side-by-side comparison of NT5AD512M16C4-HR by Nanya Technology and E3AD8G16A4-HR by ELIXIR/NANYA. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5AD512M16C4-HR | E3AD8G16A4-HR |
|---|---|---|
| Brand | Nanya Technology | ELIXIR/NANYA |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $43.10 | $8.60 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Density | 8 Gbit | 8 Gb |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 1.333 GHz (DDR4-2666) | 3200 MT/s |
| Operating Temperature | 0°C to +95°C | 0C to +95C (TCASE) |
| Package | FBGA-96 (TFBGA) | TFBGA-96 |
| Number of Pins | 96 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | Compliant |
| CAS Latency | — | 22 |
| Burst Length | — | 8 (BC4 optional) |
| Number of Banks | — | 16 (4 bank groups) |
| Refresh | — | Auto-refresh and self-refresh |
| Lead-Free | — | Yes |
| Mounting Type | — | Surface Mount |
| Speed Grade | — | DDR4-3200 |