NT5AD512M16C4-JRI vs NT5AD512M16A4-GZ Comparison

Detailed side-by-side comparison of NT5AD512M16C4-JRI by Nanya Technology and NT5AD512M16A4-GZ by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5AD512M16C4-JRI NT5AD512M16C4-JRI - 8Gb DDR4-3200 SDRAM | Nanya Technology

NT5AD512M16C4-JRI - 8Gb DDR4-3200 SDRAM | Nanya Technology

NT5AD512M16C4-JRI ✓ Active
Nanya Technology
NT5AD512M16A4-GZ NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya

NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya

NT5AD512M16A4-GZ ✓ Active

Specification Comparison

Parameter NT5AD512M16C4-JRI NT5AD512M16A4-GZ
Brand Nanya Technology Nanya Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $75.58 $8.50
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Density 8 Gbit —
Organization 512M x 16 512M x 16
Data Rate 3200 Mbps (DDR4-3200) —
Supply Voltage 1.2 V 1.2V
Operating Temperature Range -40°C to +95°C Commercial and Industrial
Package TFBGA-96 TFBGA-96
Mounting Type Surface Mount —
Auto Self-Refresh Yes Yes
Built-in Temperature Sensor Yes Yes
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Yes —
Write Leveling Yes —
Dynamic On-Chip Termination Yes —
ZQ Calibration Yes —
CRC Function Yes Yes
RoHS Compliant Compliant
Density — 8Gb
Maximum Clock Frequency — 1200 MHz
Data Bus Width — 16 bits
Number of Terminals — 96
Interleaved Burst Length — 4, 8
Access Mode — Four Bank Page Burst
Lead-Free — Yes
Data Mask Function — Yes
Write Leveling Function — Yes
ZQ Calibration Function — Yes

Datasheets & Resources

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