NVMFS6B25NLT1G vs BSC0901NSATMA1 Comparison

Detailed side-by-side comparison of NVMFS6B25NLT1G by onsemi and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter NVMFS6B25NLT1G BSC0901NSATMA1
Brand onsemi Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.78
FET Type N-Channel —
Technology MOSFET (Metal Oxide) N-Channel Trench MOSFET (OptiMOS)
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TA=25°C 8 A —
Continuous Drain Current (ID) at TC=25°C 33 A —
Drain-to-Source On-Resistance RDS(on) max @ VGS=10V 24 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V —
Power Dissipation at TA=25°C 3.6 W —
Power Dissipation at TC=25°C 62 W —
Series Automotive, AEC-Q101 —
Package 5-DFN (5x6) 8-SOFL, surface mount TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55°C to +175°C -55C to +150C
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Moisture Sensitivity Level (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

Datasheets & Resources

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