NVMFS6B25NLT1G vs BSC0901NSATMA1 Comparación
Comparación detallada lado a lado de NVMFS6B25NLT1G por onsemi y BSC0901NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | NVMFS6B25NLT1G | BSC0901NSATMA1 |
|---|---|---|
| Marca | onsemi | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,62 | $0,78 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25°C | 8 A | — |
| Continuous Drain Current (ID) at TC=25°C | 33 A | — |
| Drain-to-Source On-Resistance RDS(on) max @ VGS=10V | 24 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Power Dissipation at TA=25°C | 3.6 W | — |
| Power Dissipation at TC=25°C | 62 W | — |
| Series | Automotive, AEC-Q101 | — |
| Encapsulado | 5-DFN (5x6) 8-SOFL, surface mount | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55°C to +175°C | -55C to +150C |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Nivel de sensibilidad a la humedad (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |