NVMFS6B25NLT1G vs BSC0901NSATMA1 对比
详细并排对比 NVMFS6B25NLT1G 出自 onsemi 和 BSC0901NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NVMFS6B25NLT1G | BSC0901NSATMA1 |
|---|---|---|
| 品牌 | onsemi | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.78 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25°C | 8 A | — |
| Continuous Drain Current (ID) at TC=25°C | 33 A | — |
| Drain-to-Source On-Resistance RDS(on) max @ VGS=10V | 24 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Power Dissipation at TA=25°C | 3.6 W | — |
| Power Dissipation at TC=25°C | 62 W | — |
| Series | Automotive, AEC-Q101 | — |
| 封装 | 5-DFN (5x6) 8-SOFL, surface mount | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55°C to +175°C | -55C to +150C |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| 湿敏等级（MSL） | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |