STW12NK95Z vs STW11NK90Z Comparison
Detailed side-by-side comparison of STW12NK95Z by STMicroelectronics and STW11NK90Z by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
STMicroelectronics
STW12NK95Z - 950V 10A Zener SuperMESH MOSFET | STMicroelectronics
STW12NK95Z ✓ ActiveSTMicroelectronics
STW11NK90Z - 900V N-Channel Power MOSFET | STMicroelectronics
STW11NK90Z ✓ ActiveSpecification Comparison
| Parameter | STW12NK95Z | STW11NK90Z |
|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.19 | $2.70 |
| Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (Vdss) | 950 V | — |
| Continuous Drain Current (Id) at Tc | 10 A | — |
| On-Resistance (Rds on) Max | 0.90 ohm | — |
| On-Resistance (Rds on) Typ | 0.69 ohm | — |
| Power Dissipation (Pd) at Tc | 230 W | — |
| Technology | SuperMESH (Zener-protected PowerMESH) | — |
| Gate Protection | Zener-protected gate oxide | — |
| Avalanche Rating | 100% avalanche tested | — |
| dv/dt Capability | Extremely high [DATA_NEEDED: dv/dt value] | — |
| Mounting Type | Through Hole | Through Hole |
| Package | TO-247-3 | TO-247 |
| Operating Temperature | -55C to +150C (junction) | — |
| Gate Charge | Minimized [DATA_NEEDED: Qg typical value] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Drain-Source Voltage (VDS) | — | 900 V |
| Continuous Drain Current (ID) at 25°C | — | 9.5 A |
| Continuous Drain Current (ID) at 100°C | — | 6 A |
| Pulsed Drain Current (IDM) | — | 38 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.85 ohm |
| Gate Threshold Voltage (VGS(th)) | — | 3 V to 5 V |
| Gate Charge (Qg) | — | 45 nC |
| Input Capacitance (Ciss) | — | 1900 pF |
| Output Capacitance (Coss) | — | 150 pF |
| Reverse Transfer Capacitance (Crss) | — | 20 pF |
| Maximum Power Dissipation (PD) | — | 250 W |
| Operating Junction Temperature (Tj) | — | -55°C to +150°C |