STW12NK95Z vs STW11NK90Z Comparación
Comparación detallada lado a lado de STW12NK95Z por STMicroelectronics y STW11NK90Z por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
STW12NK95Z - 950V 10A Zener SuperMESH MOSFET | STMicroelectronics
STW12NK95Z ✓ ActivoSTMicroelectronics
STW11NK90Z - 900V N-Channel Power MOSFET | STMicroelectronics
STW11NK90Z ✓ ActivoComparación de especificaciones
| Parámetro | STW12NK95Z | STW11NK90Z |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,19 | $2,70 |
| Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (Vdss) | 950 V | — |
| Continuous Drain Current (Id) at Tc | 10 A | — |
| On-Resistance (Rds on) Max | 0.90 ohm | — |
| On-Resistance (Rds on) Typ | 0.69 ohm | — |
| Power Dissipation (Pd) at Tc | 230 W | — |
| Technology | SuperMESH (Zener-protected PowerMESH) | — |
| Gate Protection | Zener-protected gate oxide | — |
| Avalanche Rating | 100% avalanche tested | — |
| dv/dt Capability | Extremely high [DATA_NEEDED: dv/dt value] | — |
| Tipo de montaje | Through Hole | Through Hole |
| Encapsulado | TO-247-3 | TO-247 |
| Temperatura de funcionamiento | -55C to +150C (junction) | — |
| Gate Charge | Minimized [DATA_NEEDED: Qg typical value] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Drain-Source Voltage (VDS) | — | 900 V |
| Continuous Drain Current (ID) at 25°C | — | 9.5 A |
| Continuous Drain Current (ID) at 100°C | — | 6 A |
| Pulsed Drain Current (IDM) | — | 38 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.85 ohm |
| Gate Threshold Voltage (VGS(th)) | — | 3 V to 5 V |
| Gate Charge (Qg) | — | 45 nC |
| Input Capacitance (Ciss) | — | 1900 pF |
| Output Capacitance (Coss) | — | 150 pF |
| Reverse Transfer Capacitance (Crss) | — | 20 pF |
| Maximum Power Dissipation (PD) | — | 250 W |
| Operating Junction Temperature (Tj) | — | -55°C to +150°C |