TJ60S06M3L(T6L1NQ vs TJ60S06M3LT6L1.NQ Comparison
Detailed side-by-side comparison of TJ60S06M3L(T6L1NQ by Toshiba and TJ60S06M3LT6L1.NQ by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ ActiveSpecification Comparison
| Parameter | TJ60S06M3L(T6L1NQ | TJ60S06M3LT6L1.NQ |
|---|---|---|
| Brand | Toshiba | Toshiba |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.52 |
| Transistor Type | P-Channel MOSFET | — |
| Technology | Silicon U-MOS (trench) | Toshiba U-MOS (silicon) |
| Drain-Source Voltage (VDSS) | -60 V | — |
| Gate-Source Voltage (VGSS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) | -60 A (Tc) | — |
| Power Dissipation (PD) | 100 W (Tc) | — |
| RDS(ON) Max @ VGS = -10 V | 14.5 mOhm | — |
| RDS(ON) Typ @ VGS = -10 V | 11.2 mOhm | — |
| Gate Threshold Voltage (Vth) | -3.0 V typ (VDS = -1 mA, enhancement mode) | — |
| Input Capacitance (Ciss) | 7760 pF typ | 7760 pF |
| Leakage Current (IDSS) Max | -10 uA (VDS = -40 V) | — |
| Operating Temperature Range | -55 C to +175 C | — |
| Package | DPAK+ (TO-252-3) | DPAK+ (TO-252) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Status | Compliant | Compliant |
| Polarity | — | P-channel |
| Drain-Source Voltage (VDS) | — | -60 V |
| Gate-Source Voltage (VGS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) at TC=25C | — | -60 A |
| Power Dissipation (PD) at TC=25C | — | 100 W |
| RDS(on) Max at VGS=-10V | — | 0.0112 ohm |
| FET Type | — | MOSFET P-Channel, Metal Oxide |
| Operating Temperature | — | -55C to +150C (Tj) |
| MSL Level | — | 1 (unlimited) |
| Automotive Qualified | — | Yes (per Toshiba product positioning) |