TJ60S06M3L(T6L1NQ vs TJ60S06M3LT6L1.NQ Vergleich
Detaillierter Direktvergleich von TJ60S06M3L(T6L1NQ von Toshiba und TJ60S06M3LT6L1.NQ von Toshiba. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ AktivSpezifikationsvergleich
| Parameter | TJ60S06M3L(T6L1NQ | TJ60S06M3LT6L1.NQ |
|---|---|---|
| Marke | Toshiba | Toshiba |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $0,52 |
| Transistortyp | P-Channel MOSFET | — |
| Technology | Silicon U-MOS (trench) | Toshiba U-MOS (silicon) |
| Drain-Source Voltage (VDSS) | -60 V | — |
| Gate-Source Voltage (VGSS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) | -60 A (Tc) | — |
| Power Dissipation (PD) | 100 W (Tc) | — |
| RDS(ON) Max @ VGS = -10 V | 14.5 mOhm | — |
| RDS(ON) Typ @ VGS = -10 V | 11.2 mOhm | — |
| Gate Threshold Voltage (Vth) | -3.0 V typ (VDS = -1 mA, enhancement mode) | — |
| Input Capacitance (Ciss) | 7760 pF typ | 7760 pF |
| Leakage Current (IDSS) Max | -10 uA (VDS = -40 V) | — |
| Betriebstemperaturbereich | -55 C to +175 C | — |
| Gehäuse | DPAK+ (TO-252-3) | DPAK+ (TO-252) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS-Status | Compliant | Compliant |
| Polarity | — | P-channel |
| Drain-Source Voltage (VDS) | — | -60 V |
| Gate-Source Voltage (VGS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) at TC=25C | — | -60 A |
| Power Dissipation (PD) at TC=25C | — | 100 W |
| RDS(on) Max at VGS=-10V | — | 0.0112 ohm |
| FET Type | — | MOSFET P-Channel, Metal Oxide |
| Betriebstemperatur | — | -55C to +150C (Tj) |
| MSL-Level | — | 1 (unlimited) |
| Automotive Qualified | — | Yes (per Toshiba product positioning) |